Datasheet Summary
MOSFET
OptiMOSTM3Power-Transistor,120V
Features
- N-channel,logiclevel
- 100%avalanchetested
- ExcellentgatechargexRDS(on)product(FOM)
- Verylowon-resistanceRDS(on)
- 150°Coperatingtemperature
- Pb-freeleadplating;RoHSpliant
- Idealforhigh-frequencyswitchingandsynchronousrectification
- Halogen-freeaccordingtoIEC61249-2-21
Productvalidation
QualifiedaccordingtoJEDECStandard
Table1KeyPerformanceParameters
Parameter
Value
Unit
RDS(on),max
12 mΩ
Qoss
51 nC
QG(0V..10V)
51 nC
SuperSO8
8 7 65
56 78
1 23 4
Drain Pin 5-8
Gate
-...