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Infineon Technologies Electronic Components Datasheet

BSC034N06NS Datasheet

Power-Transistor

No Preview Available !

Type
OptiMOSTM Power-Transistor
Features
• Optimized for high performance SMPS, e.g. sync. rec.
• 100% avalanche tested
• Superior thermal resistance
• N-channel
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
BSC034N06NS
Product Summary
VDS
RDS(on),max
ID
QOSS
QG(0V..10V)
60 V
3.4 mW
100 A
37 nC
33 nC
PG-TDSON-8
Type
BSC034N06NS
Package
PG-TDSON-8
Marking
034N06NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C
100 A
V GS=10 V, T C=100 °C
71
V GS=10 V, T C=25 °C,
R thJA =50K/W2)
21
Pulsed drain current3)
Avalanche energy, single pulse4)
I D,pulse
E AS
T C=25 °C
I D=50 A, R GS=25 W
400
71 mJ
Gate source voltage
V GS
±20 V
1) J-STD20 and JESD22
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See figure 3 for more detailed information
4) See figure 13 for more detailed information
Rev.2.0
page 1
2013-10-17


Infineon Technologies Electronic Components Datasheet

BSC034N06NS Datasheet

Power-Transistor

No Preview Available !

Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot T C=25 °C
T A=25 °C,
R thJA=50 K/W2)
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
BSC034N06NS
Value
74
2.5
-55 ... 150
55/150/56
Unit
W
°C
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case R thJC
Device on PCB
R thJA
bottom
top
6 cm2 cooling area2)
-
-
-
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=41 µA
I DSS
V DS=60 V, V GS=0 V,
T j=25 °C
V DS=60 V, V GS=0 V,
T j=125 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on) V GS=10 V, I D=50 A
V GS=6 V, I D=12.5 A
RG
g fs
|V DS|>2|I D|R DS(on)max,
I D=50 A
60
2.1
-
-
-
-
-
-
46
- 1.7 K/W
- 20
- 50
- -V
2.8 3.3
0.1 1 µA
10 100
10 100 nA
2.8 3.4 mW
4.0 5.1
1.3 2.0 W
93 - S
Rev.2.0
page 2
2013-10-17


Part Number BSC034N06NS
Description Power-Transistor
Maker Infineon
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BSC034N06NS Datasheet PDF






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