BSC034N06NS
Description
1 Final Data Sheet 2 Rev.2.3,2020-05-06 OptiMOSTMPower-Transistor,60V BSC034N06NS 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Pulsed drain current3) Avalanche energy, single pulse4) Gate source voltage Power dissipation Operating and storage temperature ID ID,pulse EAS VGS Ptot Tj,Tstg Min.
Key Features
- OptimizedforhighperformanceSMPS,e.g.sync.rec
- 100%avalanchetested
- Superiorthermalresistance
- QualifiedaccordingtoJEDEC1)fortargetapplications
- Pb-freeleadplating;RoHSpliant
