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Infineon Technologies Electronic Components Datasheet

BSC042N03SG Datasheet

Power-Transistor

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OptiMOS™2 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for notebook DC/DC converters
• Qualified according to JEDEC1 for target applications
• Logic level / N-channel
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Superior thermal resistance
• Avalanche rated; dv/dt rated
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
BSC042N03S G
Product Summary
V DS
R DS(on),max
ID
30 V
4.2 m
95 A
PG-TDSON-8
Type
BSC042N03S G
Package
PG-TDSON-8
Marking
42N03S
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
T C=100 °C
T A=25 °C,
R thJA=45 K/W2)
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
I D,pulse
E AS
dv /dt
T C=25 °C3)
I D=50 A, R GS=25
I D=50 A, V DS=24 V,
di /dt =200 A/µs,
T j,max=150 °C
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
T A=25 °C,
R thJA=45 K/W2)
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Rev. 1.91
page 1
Value
95
60
20
200
280
6
±20
62.5
2.8
-55 ... 150
55/150/56
Unit
A
mJ
kV/µs
V
W
°C
2009-10-22


Infineon Technologies Electronic Components Datasheet

BSC042N03SG Datasheet

Power-Transistor

No Preview Available !

Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case R thJC
Thermal resistance,
junction - ambient
R thJA
bottom
top
minimal footprint
6 cm2 cooling area2)
BSC042N03S G
min.
Values
typ.
Unit
max.
- - 2 K/W
18
- - 62
- - 45
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=50 µA
I DSS
V DS=30 V, V GS=0 V,
T j=25 °C
30
1.2
-
-
1.6
0.1
-V
2
1 µA
V DS=30 V, V GS=0 V,
T j=125 °C
-
10 100
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
10 100 nA
Drain-source on-state resistance
R DS(on) V GS=4.5 V, I D=50 A
-
5.2 6.5 m
V GS=10 V, I D=50 A
- 3.5 4.2
Gate resistance
RG
0.4 0.9 1.8
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=50 A
49
98
-S
1)J-STD20 and JESD22
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See figure 3
Rev. 1.91
page 2
2009-10-22


Part Number BSC042N03SG
Description Power-Transistor
Maker Infineon
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BSC042N03SG Datasheet PDF






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