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Infineon Technologies Electronic Components Datasheet

BSC042NE7NS3G Datasheet

Power-Transistor

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OptiMOSTM3 Power-Transistor
Features
• Optimized technology for synchronous rectification
• Ideal for high frequency switching and DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Halogen-free according to IEC61249-2-21
Type
BSC042NE7NS3 G
Product Summary
V DS
R DS(on),max
ID
BSC042NE7NS3 G
75 V
4.2 m
100 A
Package
Marking
PG-TDSON-8
042NE7NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
Value
100
83
Unit
A
V GS=10 V, T A=25 °C,
R thJA=50 K/W2)
19
Pulsed drain current3)
I D,pulse T C=25 °C
400
Avalanche energy, single pulse
E AS I D=50 A, R GS=25
220 mJ
Gate source voltage
V GS
±20 V
1) J-STD20 and JESD22
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See figure 3 for more detailed information
4) See figure 13 for more detailed information
Rev. 2.21
page 1
2009-11-11


Infineon Technologies Electronic Components Datasheet

BSC042NE7NS3G Datasheet

Power-Transistor

No Preview Available !

Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot T C=25 °C
T A=25 °C,
R thJA=50 K/W2)
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
BSC042NE7NS3 G
Value
125
2.5
-55 ... 150
55/150/56
Unit
W
°C
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case R thJC
Device on PCB
R thJA
top
minimal footprint
6 cm2 cooling area2)
-
-
-
- 1 K/W
18
- 62
- 50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
75
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=91 µA 2.3 3.1 3.8
Zero gate voltage drain current
I DSS
V DS=75 V, V GS=0 V,
T j=25 °C
-
0.1
1 µA
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V DS=75 V, V GS=0 V,
T j=125 °C
I GSS
R DS(on)
RG
V GS=20 V, V DS=0 V
V GS=10 V, I D=50 A
g fs
|V DS|>2|I D|R DS(on)max,
I D=50 A
-
-
-
-
44
10 100
10 100 nA
3.7 4.2 m
2.2 -
89 - S
Rev. 2.21
page 2
2009-11-11


Part Number BSC042NE7NS3G
Description Power-Transistor
Maker Infineon
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BSC042NE7NS3G Datasheet PDF






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