Datasheet Summary
MOSFET
OptiMOSTMPower-MOSFET,30V
Features
- Verylowon-resistanceRDS(on)@VGS=4.5V
- 100%avalanchetested
- Superiorthermalresistance
- N-channel,logiclevel
- Optimizedforhighperformancebuckconverter
- QualifiedaccordingtoJEDEC1)fortargetapplications
- Pb-freeleadplating;RoHSpliant
- Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
RDS(on),max
5.2 mΩ
1.9 nC
QG(0V..10V)
12 nC
PG-TDSON-8
8 7 6 5
5 6 7 8
Pin 1
2 3
4 3
2 1
Drain Pin 5-8
Gate
-...
