BSC052N03LS - 30V MOSFET

Description

Features

Very low on-resistance RDS(on) @ VGS=4.5 V.
100% avalanche tested.
Superior thermal resistance.
N-channel, logic level.
Optimized for high performance buck converter.
Qualified according to JEDEC1) for target.

Infineon

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Datasheet Details

Part number	BSC052N03LS
Manufacturer	Infineon
File Size	1.70 MB
Description	30V MOSFET
Datasheet	BSC052N03LS Datasheet
Additional preview pages of the BSC052N03LS datasheet.

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Full PDF Text Transcription

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BSC052N03LS MOSFET OptiMOSTMPower-MOSFET,30V Features •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avalanchetested •Superiorthermalresistance •N-channel,logiclevel •Optimizedforhighperformancebuckconverter •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 30 V RDS(on),max 5.2 mΩ ID 57 A QGD 1.9 nC QG(0V..10V) 12 nC PG-TDSON-8 8 7 6 5 5 6 7 8 Pin 1 2 3 4 4 3 2 1 Drain Pin 5-8 Gate *1 Pin 4 Source *1: Internal body diode Pin 1-3 Type/OrderingCode BSC052N03LS Package PG-TDSON-8 Marking 052N03LS RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.

Published: Dec 10, 2013 |