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Infineon Technologies Electronic Components Datasheet

BSC054N04NSG Datasheet

Power-Transistor

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OptiMOS™3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC1) for target applications
• N-channel; Normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Superior thermal resistance
• 100% Avalanche rated
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
BSC054N04NS G
Product Summary
VDS
RDS(on),max
ID
40 V
5.4 mW
81 A
PG-TDSON-8
Type
Package
Marking
BSC054N04NS G
PG-TDSON-8 054N04NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
Pulsed drain current3)
Avalanche current, single pulse4)
Avalanche energy, single pulse
Gate source voltage
1) J-STD20 and JESD22
V GS=10 V, T A=25 °C,
R thJA=50 K/W2)
I D,pulse
I AS
E AS
V GS
T C=25 °C
T C=25 °C
I D=50 A, R GS=25 W
Value
81
52
17
324
50
35
±20
Unit
A
mJ
V
Rev. 2.1
page 1
2013-05-17


Infineon Technologies Electronic Components Datasheet

BSC054N04NSG Datasheet

Power-Transistor

No Preview Available !

Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot T C=25 °C
T A=25 °C,
R thJA=50 K/W2)
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
BSC054N04NS G
Value
57
2.5
-55 ... 150
55/150/56
Unit
W
°C
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case R thJC bottom
top
Device on PCB
R thJA 6 cm2 cooling area2)
Electrical characteristics, at T j=25 °C, unless otherwise specified
-
-
-
- 2.2 K/W
- 20
- 50
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=27 µA
I DSS
V DS=40 V, V GS=0 V,
T j=25 °C
40
2
-
-
-
0.1
-V
4
1 µA
V DS=40 V, V GS=0 V,
T j=125 °C
-
10 100
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
10 100 nA
Drain-source on-state resistance
R DS(on) V GS=10 V, I D=50 A
- 4.5 5.4 mW
Gate resistance
RG
- 1.5 - W
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=50 A
34
67
-S
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See figure 3 for more detailed information
4) See figure 13 for more detailed information
Rev. 2.1
page 2
2013-05-17


Part Number BSC054N04NSG
Description Power-Transistor
Maker Infineon
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BSC054N04NSG Datasheet PDF






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