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Infineon Technologies Electronic Components Datasheet

BSC057N03MSG Datasheet

Power-Transistor

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BSC057N03MS G
OptiMOS™3 M-Series Power-MOSFET
Features
• Optimized for 5V driver application (Notebook, VGA, POL)
• Low FOMSW for High Frequency SMPS
• 100% avalanche tested
• N-channel
• Very low on-resistance R DS(on) @ V GS=4.5 V
• Excellent gate charge x R DS(on) product (FOM)
• Qualified according to JEDEC1) for target applications
• Superior thermal resistance
• Pb-free plating; RoHS compliant
Product Summary
VDS
RDS(on),max
ID
VGS=10 V
VGS=4.5 V
30
5.7
7.2
71
PG-TDSON-8
V
mW
A
• Halogen-free according to IEC61249-2-21
Type
BSC057N03MS G
Package
PG-TDSON-8
Marking
057N03MS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
Pulsed drain current3)
Avalanche current, single pulse4)
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
1) J-STD20 and JESD22
Rev. 2.1
V GS=4.5 V, T C=25 °C
V GS=4.5 V,
T C=100 °C
V GS=4.5 V, T A=25 °C,
R thJA=50 K/W2)
I D,pulse
I AS
E AS
dv /dt
V GS
T C=25 °C
T C=25 °C
I D=40 A, R GS=25 W
I D=50 A, V DS=24 V,
di /dt =200 A/µs,
T j,max=150 °C
page 1
Value
71
45
63
40
15
284
50
25
6
±16
Unit
A
mJ
kV/µs
V
2013-05-17


Infineon Technologies Electronic Components Datasheet

BSC057N03MSG Datasheet

Power-Transistor

No Preview Available !

Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot T C=25 °C
T A=25 °C,
R thJA=50 K/W2)
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
BSC057N03MS G
Value
45
2.5
-55 ... 150
55/150/56
Unit
W
°C
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case R thJC
Device on PCB
R thJA
bottom
top
6 cm2 cooling area2)
-
-
-
- 2.8 K/W
- 20
- 50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=250 µA
I DSS
V DS=30 V, V GS=0 V,
T j=25 °C
30
1
-
-
-
0.1
-V
2
1 µA
V DS=30 V, V GS=0 V,
T j=125 °C
-
10 100
Gate-source leakage current
I GSS
V GS=16 V, V DS=0 V
-
10 100 nA
Drain-source on-state resistance
R DS(on) V GS=4.5 V, I D=30 A
-
5.8 7.2 mW
V GS=10 V, I D=30 A
- 4.8 5.7
Gate resistance
RG
0.6 1.3 2.3 W
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=30 A
35
70
-S
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See figure 3 for more detailed information
Rev. 2.1
page 2
2013-05-17


Part Number BSC057N03MSG
Description Power-Transistor
Maker Infineon
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BSC057N03MSG Datasheet PDF






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