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BSC080N03MS G
OptiMOS™3 M-Series Power-MOSFET
Features • Optimized for 5V driver application (Notebook, VGA, POL) • Low FOMSW for High Frequency SMPS • 100% avalanche tested • N-channel • Very low on-resistance R DS(on) @ V GS=4.5 V • Excellent gate charge x R DS(on) product (FOM) • Qualified according to JEDEC1) for target applications • Superior thermal resistance • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21
Product Summary
V DS R DS(on),max
ID
30 V
V GS=10 V V GS=4.5 V
8 mΩ 10.2 53 A
PG-TDSON-8
Type BSC080N03MS G
Package PG-TDSON-8
Marking 080N03MS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C
V GS=4.5 V, T C=25 °C
V GS=4.
BSC080N03MSG Datasheet
