BSG0810NDI block equivalent, power block.
* Dual asymmetric N-channel OptiMOS™5 MOSFET
* Logic level (4.5V rated)
VDS RDS(on),max
VGS=10 V
Q1 Q2 25 25 V 3 0.85 mW
* Pb-free lead plating; RoHS comp.
* Halogen-free according to IEC61249-2-21
* Monolithic integrated Schottky like diode
S1/D2 (VPhase) (5) S1/D2 .
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