Full PDF Text Transcription for BSG0811ND (Reference)
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BSG0811ND. For precise diagrams, and layout, please refer to the original PDF.
BSG0811ND Power Block Product Summary Features • Dual asymmetric N-channel OptiMOS™5 MOSFET • Logic level (4.5V rated) VDS RDS(on),max • Optimized for high performance bu...
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level (4.5V rated) VDS RDS(on),max • Optimized for high performance buck converters • Qualified according to JEDEC1) for target applications ID VGS=10 V VGS=4.5 V Q1 Q2 25 25 V 3 0.8 mW 4 1.1 50 50 A • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 S1/D2 (VPhase) (5) S1/D2 (VPhase) (6) (4) D1 (Vin) Q1 (9) (3) D1 (Vin) S1/D2 (VPhase) (7) Q2 G2 (GLS) (8) (10) (2) S1 (VPhase) (1) G1 (GHS) S2 (GND) Top view Type BSG0811ND Package PG-TISON8-4 Marking 0811ND Maximum ratings, at T j=25 °C, unless otherwise specified 2) Parameter Symbol Conditions Continuous drain current I D T C=70 °C, V GS=10 V T
BSG0811ND Datasheet
