Full PDF Text Transcription for BSN048N03LS (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
BSN048N03LS. For precise diagrams, and layout, please refer to the original PDF.
OptiMOSTM Power-MOSFET Features • Optimized for high performance Buck converter • Very low parasitic inductance • Low profile (<0.5 mm) • Double side cooling • N-channel ...
View more extracted text
inductance • Low profile (<0.5 mm) • Double side cooling • N-channel • 100% avalanche tested • Very low on-resistance R DS(on) @ V GS=4.5 V • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 • Qualified according to JEDEC1) for target applications Product Summary VDS RDS(on),max ID QOSS QG(0V..10V) BSN048N03LS 30 V 4.8 mW 50 A 8.