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BSS306N - Small-Signal-Transistor

Features

  • N-channel.
  • Enhancement mode.
  • Logic level (4.5V rated).
  • Avalanche rated.
  • Qualified according to AEC Q101.
  • 100% lead-free; RoHS compliant Product Summary V DS R DS(on),max V GS=10 V V GS=4.5 V ID 30 57 93 2.3 A V mΩ PG-SOT23 3 1 2 Type BSS306N Package SOT23 Tape and Reel Information L6327: 3000 pcs/ reel Marking SWs Lead Free Yes Packing Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain curr.

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Datasheet Details

Part number BSS306N
Manufacturer Infineon
File Size 289.28 KB
Description Small-Signal-Transistor
Datasheet download datasheet BSS306N Datasheet
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Full PDF Text Transcription

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BSS306N OptiMOS™2 Small-Signal-Transistor Features • N-channel • Enhancement mode • Logic level (4.5V rated) • Avalanche rated • Qualified according to AEC Q101 • 100% lead-free; RoHS compliant Product Summary V DS R DS(on),max V GS=10 V V GS=4.5 V ID 30 57 93 2.3 A V mΩ PG-SOT23 3 1 2 Type BSS306N Package SOT23 Tape and Reel Information L6327: 3000 pcs/ reel Marking SWs Lead Free Yes Packing Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T A=25 °C T A=70 °C Pulsed drain current Avalanche energy, single pulse I D,pulse E AS T A=25 °C I D=2.3 A, R GS=25 Ω I D=2.3 A, V DS=16 V, di /dt =200 A/µs, T j,max=150 °C Value 2.3 1.8 9 10.
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