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BSZ014NE2LS5IF - MOSFET

Features

  • Optimized for synchronous rectification.
  • Monolithic integrated Schottky like diode.
  • Very low on-resistance RDS(on) @ VGS=4.5 V.
  • Excellent gate charge x RDS(on) product (FOM).
  • 100% avalanche tested.
  • N-channel.
  • Qualified according to JEDEC1) for target.

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MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTM5Power-MOSFET,25V BSZ014NE2LS5IF DataSheet Rev.2.1 Final PowerManagement&Multimarket 1Description Features •Optimizedforsynchronousrectification •MonolithicintegratedSchottkylikediode •Verylowon-resistanceRDS(on)@VGS=4.5V •ExcellentgatechargexRDS(on)product(FOM) •100%avalanchetested •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 25 V RDS(on),max 1.45 mΩ ID 40 A QOSS 26 nC QG(0V..4.
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