BSZ014NE2LS5IF
Key Features
- Optimizedforsynchronousrectification
- MonolithicintegratedSchottkylikediode
- Verylowon-resistanceRDS(on)@VGS=4.5V
- ExcellentgatechargexRDS(on)product(FOM)
- 100%avalanchetested
- N-channel
- QualifiedaccordingtoJEDEC1)fortargetapplications
- Pb-freeleadplating;RoHScompliant
- Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 25 V RDS(on),max
- 45 mΩ ID 40 A QOSS 26 nC QG(0V..4.5V) 11 nC OptiMOSTM5Power-MOSFET,25V BSZ014NE2LS5IF TSDSON-8FL (enlarged source interconnection)
