* Optimized for synchronous rectification
* Monolithic integrated Schottky like diode
* Very low on-resistance RDS(on) @ VGS=4.5 V
* Excellent gate charge x RDS(on) product (FOM)
* 100% avalanche tested
* N-channel
* Qualified according to JEDE
BSZ014NE2LS5IF Datasheet (1.56 MB)
BSZ014NE2LS5IF
1.56 MB
Mosfet.
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-MOSFET, 25 V BSZ014NE2LS5IF Data Sheet Rev. 2.1 Final Power Manage.
📁 Related Datasheet
BSZ013NE2LS5I MOSFET (Infineon)
BSZ017NE2LS5I MOSFET (Infineon)
BSZ018N04LS6 MOSFET (Infineon)
BSZ018NE2LS n-Channel Power MOSFET (Infineon)
BSZ018NE2LSI Power-Transistor (Infineon)
BSZ019N03LS n-Channel Power MOSFET (Infineon)
BSZ023N04LS Power MOSFET (Infineon)
BSZ025N04LS MOSFET (Infineon)
BSZ028N04LS MOSFET (Infineon)
BSZ031NE2LS5 MOSFET (Infineon)
