Datasheet4U Logo Datasheet4U.com

BSZ067N06LS3G - Power MOSFET

Key Features

  • Ideal for high frequency switching and sync. rec.
  • Optimized technology for DC/DC converters.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance RDS(on).
  • N-channel, logic level.
  • 100% avalanche tested.
  • Pb-free plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by Infineon

Part Number Description
BSZ0602LS MOSFET
BSZ060NE2LS n-Channel Power MOSFET
BSZ065N03LS Power MOSFET
BSZ065N06LS5 MOSFET
BSZ068N06NS 60V MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BSZ067N06LS3 G OptiMOSTM3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, logic level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 Type BSZ067N06LS3 G Product Summary V DS R DS(on),max ID 60 6.7 20 V mΩ A Package Marking PG-TSDSON-8 067N06L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.5 V, T C=25 °C V GS=4.