Datasheet4U Logo Datasheet4U.com

BSZ096N10LS5 - MOSFET

General Description

.

.

Key Features

  • Ideal for high frequency switching.
  • Optimized technology for DC/DC converters.
  • Excellent gate charge x RDS(on) product (FOM).
  • N-channel, Logic level.
  • 100% avalanche tested.
  • Pb-free plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by Infineon

Part Number Description
BSZ0901NS 30V Power MOSFET
BSZ0901NSI Power MOSFET
BSZ0902NS N-Channel Power MOSFET
BSZ0902NSI n-Channel Power MOSFET
BSZ0904NSI n-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BSZ096N10LS5 MOSFET OptiMOSTM5Power-Transistor,100V Features •Idealforhighfrequencyswitching •OptimizedtechnologyforDC/DCconverters •ExcellentgatechargexRDS(on)product(FOM) •N-channel,Logiclevel •100%avalanchetested •Pb-freeplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplications •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 9.6 mΩ ID 40 A QOSS 30 nC QG(0VB4.5V) 12 nC TSDSON-8FL (enlarged source interconnection) S1 8D S2 7D S3 6D G4 5D Type/OrderingCode BSZ096N10LS5 Package PG-TSDSON-8 FL Marking 096N10L RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.