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Infineon Technologies Electronic Components Datasheet

BSZ215CH Datasheet

Small Signal Transistor

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OptiMOS™2 + OptiMOS™-P 2 Small Signal Transistor
Features
Product Summary
· Complementary P + N channel
· Enhancement mode
· Super Logic level (2.5V rated)
· Common drain
· Avalanche rated
VDS
RDS(on),max
ID
VGS=±4.5 V
VGS=±2.5 V
· 175 °C operating temperature
· Qualified according to AEC Q101
· 100% lead-free; RoHS compliant
S1 1
G1 2
8 D2
7 D1
· Halogen-free according to IEC61246-21 S2 3
6 D2
G2 4
5 D2
BSZ215C H
PN
-20 20 V
150 55 mW
310 95
-3.2 5.1 A
Type
BSZ215C H
Package
PG-TSDSON-8 LTI
Marking
215C
Lead Free
Yes
Maximum ratings, at T j=25 °C, unless otherwise specified 1)
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
ID
I D,pulse
E AS
V GS
P tot 2)
T A=25 °C
T A=100 °C
T A=25 °C
P: I D=-3.2 A,
N: I D=5.1 A,
R GS=25 W
T A=25 °C
Halogen Free
Yes
Packing
Non dry
Value
PN
-3.2 5.1
-2.2 3.6
-13 20
11 11
±12
2.5
Unit
A
mJ
V
W
Operating and storage temperature T j, T stg
-55 ... 175
°C
ESD class
Soldering temperature
T solder
IEC climatic category; DIN IEC 68-1
1) Remark: only one of both transistors active
JESD22-A114-HBM
0 (<250V)
260
55/175/56
°C
Rev 2.0
page 1
2015-07-15


Infineon Technologies Electronic Components Datasheet

BSZ215CH Datasheet

Small Signal Transistor

No Preview Available !

BSZ215C H
Parameter
Thermal characteristics
Thermal resistance, junction -
case
Device on PCB
Symbol Conditions
min.
Values
typ.
Unit
max.
P
R thJC
N
R thJA
6 cm2 cooling area2)
-
-
- 8 K/W
- 60 K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage P V (BR)DSS V GS=0 V, I D=-250 µA
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
N
P V GS(th)
N
P I DSS
N
P
N
P
I GSS
N
V GS=0 V, I D=250 µA
V DS=V GS, I D=-110 µA
V DS=V GS, I D=110 µA
V DS=-20 V, V GS=0 V,
T j=25 °C
V DS=20 V, V GS=0 V,
T j=25 °C
V DS=-20 V, V GS=0 V,
T j=175 °C
V DS=20 V, V GS=0 V,
T j=175 °C
V GS=±12 V, V DS=0 V
Drain-source on-state
resistance
P R DS(on)
V GS=-2.5 V,
I D=2.1 A
N V GS=2.5 V, I D=1.9 A
-
20
-1.4
0.8
-
-
-
-
-
-
-
- -20 V
--
-1.0 -0.7
1.1 1.4
- -0.1 µA
- 0.1
- -50
- 50
- ±100 nA
144 310 mW
63 95
P
V GS=-4.5 V, I D=-3.2 A
-
95 150
Transconductance
N
P g fs
V GS=4.5 V, I D=5.1 A
|V DS|>2|I D|R DS(on)max,
I D=-2.2 A
-
4
41 55
7.9 - S
N
|V DS|>2|I D|R DS(on)max,
I D=3.6 A
5.5
11
-
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 μm thick) copper area for drain
connection. PCB is vertical in still air.
Rev 2.0
page 2
2015-07-15


Part Number BSZ215CH
Description Small Signal Transistor
Maker Infineon
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BSZ215CH Datasheet PDF






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