Infineon Technologies Electronic Components Datasheet

BSZ215CH Datasheet

Small Signal Transistor

No Preview Available !

OptiMOS™2 + OptiMOS™-P 2 Small Signal Transistor

Features

Product Summary

· Complementary P + N channel

· Enhancement mode

· Super Logic level (2.5V rated)

· Common drain

· Avalanche rated

VDS

RDS(on),max

VGS=±4.5 V

VGS=±2.5 V

· 175 °C operating temperature

· Qualified according to AEC Q101

· 100% lead-free; RoHS compliant

S1 1

G1 2

8 D2

7 D1

· Halogen-free according to IEC61246-21 S2 3

6 D2

G2 4

5 D2

BSZ215C H

-20 20 V

150 55 mW

310 95

-3.2 5.1 A

Type

BSZ215C H

Package

PG-TSDSON-8 LTI

Marking

215C

Lead Free

Yes

Maximum ratings, at T j=25 °C, unless otherwise specified 1)

Parameter

Symbol Conditions

Continuous drain current

Pulsed drain current

Avalanche energy, single pulse

Gate source voltage

Power dissipation

I D,pulse

E AS

V GS

P tot 2)

T A=25 °C

T A=100 °C

T A=25 °C

P: I D=-3.2 A,

N: I D=5.1 A,

R GS=25 W

T A=25 °C

Halogen Free

Yes

Packing

Non dry

Value

-3.2 5.1

-2.2 3.6

-13 20

11 11

±12

2.5

Unit

Operating and storage temperature T j, T stg

-55 ... 175

°C

ESD class

Soldering temperature

T solder

IEC climatic category; DIN IEC 68-1

1) Remark: only one of both transistors active

JESD22-A114-HBM

0 (<250V)

260

55/175/56

°C

Rev 2.0

page 1

2015-07-15

Infineon Technologies Electronic Components Datasheet

BSZ215CH Datasheet

Small Signal Transistor

No Preview Available !

BSZ215C H

Parameter

Thermal characteristics

Thermal resistance, junction -

case

Device on PCB

Symbol Conditions

min.

Values

typ.

Unit

max.

R thJC

R thJA

6 cm2 cooling area2)

- 8 K/W

- 60 K/W

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage P V (BR)DSS V GS=0 V, I D=-250 µA

Gate threshold voltage

Zero gate voltage drain current

Gate-source leakage current

P V GS(th)

P I DSS

I GSS

V GS=0 V, I D=250 µA

V DS=V GS, I D=-110 µA

V DS=V GS, I D=110 µA

V DS=-20 V, V GS=0 V,

T j=25 °C

V DS=20 V, V GS=0 V,

T j=25 °C

V DS=-20 V, V GS=0 V,

T j=175 °C

V DS=20 V, V GS=0 V,

T j=175 °C

V GS=±12 V, V DS=0 V

Drain-source on-state

resistance

P R DS(on)

V GS=-2.5 V,

I D=2.1 A

N V GS=2.5 V, I D=1.9 A

-1.4

0.8

- -20 V

-1.0 -0.7

1.1 1.4

- -0.1 µA

- 0.1

- -50

- 50

- ±100 nA

144 310 mW

63 95

V GS=-4.5 V, I D=-3.2 A

95 150

Transconductance

P g fs

V GS=4.5 V, I D=5.1 A

|V DS|>2|I D|R DS(on)max,

I D=-2.2 A

41 55

7.9 - S

|V DS|>2|I D|R DS(on)max,

I D=3.6 A

5.5

2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 μm thick) copper area for drain

connection. PCB is vertical in still air.

Rev 2.0

page 2

2015-07-15

900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf

BSZ215CH Datasheet

Small Signal Transistor

BSZ215CH Datasheet

Small Signal Transistor

Similar Datasheet

Part Number Start With