BSZ900N15NS3G Description
s OptiMOSTM3 Power-Transistor Package Marking N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) 150 °C operating temperature Pb-free lead plating; 150 55/150/56 Unit A mJ V W °C Rev. 2.1 page 2 2011-05-16 Parameter Symbol Conditions BSZ900N15NS3 G min.