s
OptiMOSTM3 Power-Transistor
Package
Marking
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 150 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Halogen-free according to IEC61249-2-21
BSZ900N15NS3 G
Product Summary
V DS
R DS(on),max
ID
150 V
90 mΩ
13 A
PG-TSDSON-8
Type
BSZ900N15NS3 G
Package
PG-TSDSON-8
Marking
900N15N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=10 A, R GS=25 Ω
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
Value
13
8
52
30
±20
38
-55 ... 150
55/150/56
Unit
A
mJ
V
W
°C
Rev. 2.1
page 1
2011-05-16
