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BSZ900N15NS3G Datasheet - Infineon

BSZ900N15NS3G - Power MOSFET

s OptiMOSTM3 Power-Transistor Package Marking * N-channel, normal level * Excellent gate charge x R DS(on) product (FOM) * Very low on-resistance R DS(on) * 150 °C operating temperature * Pb-free lead plating; RoHS compliant * Qualified according to JEDEC1) for target application * Halogen-free according to IEC61249-2-21 BSZ900N15NS3 G Product Summary V DS R DS(on),max ID 150 V 90 mΩ 13 A PG-TSDSON-8 Type BSZ900N15NS3 G Package PG-TSD

BSZ900N15NS3G_Infineon.pdf