Infineon Technologies BUY25CS45B-01
HiRel RadHard Power-MOS
| Part No. | BUY25CS45B-01 |
|---|---|
| Datasheet | BUY25CS45B-01 Download |
| Manufacturer |  Infineon Technologies |
| Description | HiRel RadHard Power-MOS |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Drain Source Voltage Gate Source Voltage Drain Gate Voltage Continuous Drain Current TC = 25 °C TC = 100 °C Continuous Source Current Drain Current Pulsed, tp limited by Tjmax Total Power Dissipation 1) Junction Temperature Operating and Storage Temperature Avalanche Energy Symbol VDS VGS VDG ID IS IDM Ptot TJ Top EAS Values 250 +/- 20 250 45 29 45 180 208 -55 to + 150 -55 to + 150 380 Unit V V V A A Apk W °C °C mJ Thermal Characteristics Thermal Resistance (Junction to Case) Soldering Temperature Notes.: 1) For TS ≤ 25°C. For TS > 25°C derating is required. Rth JC Tsol 0.6 250 K/W °C IFAG PMM RFS D HIR 1 of 8 Preliminary Mar 2015 Data Sheet BUY25CS45B-01ELECTRICAL CHARACTERISTICS
, at TA=25°C; unless otherwise specified Parameter Symbol Values Unit min. max. DC Characteristics Breakdown Voltage Drain to Source ID = 0.25mA, VGS = 0V BVDSS Gate Threshold Voltage ID = 1.0mA, VDS ≥ VGS VGS(th) Gate to Source Leakage Current VDS = 0V, VGS = +/- 20V IGSS Drain Curr...
