BUY25CS45B-01
Data Sheet BUY25CS45B-01 Hi Rel Rad Hard Power-MOS
- Low RDS(on)
- Single Event Effect (SEE) hardened
LET 85, Range: 118µm LET 55, Range: 90µm
VGS = -10V, VDS = 250V
VGS = -15V, VDS = 250V
VGS = -15V, VDS = 120V
VGS = -20V, VDS = 160V
- Total Ionisation Dose (TID) hardened
100 k Rad approved
- Hermetically sealed
- N-channel
1 2
Type BUY25CS45B-01
Marking
- Pin Configuration 123
D SG
Package 4
Not connected TO-254AA
Maximum Ratings Parameter Drain Source Voltage Gate Source Voltage Drain Gate Voltage Continuous Drain Current TC = 25 °C TC = 100 °C Continuous Source Current Drain Current Pulsed, tp limited by Tjmax Total Power Dissipation 1) Junction Temperature Operating and Storage Temperature Avalanche Energy
Symbol VDS VGS VDG ID
IS IDM Ptot TJ Top EAS
Values 250 +/- 20 250
45 29 45 180 208 -55 to + 150 -55 to + 150 380
Unit V V V A
A Apk W °C °C m J
Thermal Characteristics Thermal Resistance (Junction to Case) Soldering Temperature
Notes.: 1) For TS ≤ 25°C....
