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Infineon Technologies Electronic Components Datasheet

BUY25CS45B-01 Datasheet

HiRel RadHard Power-MOS

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Data Sheet BUY25CS45B-01
HiRel RadHard Power-MOS
Low RDS(on)
Single Event Effect (SEE) hardened
LET 85, Range: 118µm LET 55, Range: 90µm
VGS = -10V, VDS = 250V
VGS = -15V, VDS = 250V
VGS = -15V, VDS = 120V
VGS = -20V, VDS = 160V
Total Ionisation Dose (TID) hardened
100 kRad approved
Hermetically sealed
N-channel
1
2
3
4
Type
BUY25CS45B-01
Marking
-
Pin Configuration
123
D SG
Package
4
Not connected TO-254AA
Maximum Ratings
Parameter
Drain Source Voltage
Gate Source Voltage
Drain Gate Voltage
Continuous Drain Current
TC = 25 °C
TC = 100 °C
Continuous Source Current
Drain Current Pulsed, tp limited by Tjmax
Total Power Dissipation 1)
Junction Temperature
Operating and Storage Temperature
Avalanche Energy
Symbol
VDS
VGS
VDG
ID
IS
IDM
Ptot
TJ
Top
EAS
Values
250
+/- 20
250
45
29
45
180
208
-55 to + 150
-55 to + 150
380
Unit
V
V
V
A
A
Apk
W
°C
°C
mJ
Thermal Characteristics
Thermal Resistance (Junction to Case)
Soldering Temperature
Notes.:
1) For TS ≤ 25°C. For TS > 25°C derating is required.
Rth JC
Tsol
0.6
250
K/W
°C
IFAG PMM RFS D HIR
1 of 8
Preliminary Mar 2015


Infineon Technologies Electronic Components Datasheet

BUY25CS45B-01 Datasheet

HiRel RadHard Power-MOS

No Preview Available !

Data Sheet BUY25CS45B-01
Electrical Characteristics, at TA=25°C; unless otherwise specified
Parameter
Symbol
Values
Unit
min. max.
DC Characteristics
Breakdown Voltage Drain to Source
ID = 0.25mA, VGS = 0V
BVDSS
Gate Threshold Voltage
ID = 1.0mA, VDS VGS
VGS(th)
Gate to Source Leakage Current
VDS = 0V, VGS = +/- 20V
IGSS
Drain Current
VDS = 200V, VGS = 0V
Drain Source On Resistance 1)
VGS = 10V, ID = 29A
Source Drain Diode, Forward Voltage 1), 2)
VGS = 0V, IS = 45A
IDSS
rDS(ON)
VSD
250
2.0
-
-
-
-
-V
4.0 V
+/-100 nA
25 µA
0.05 Ω
1.4 V
AC Characteristics
Turn-on Delay Time
VDD = 50% VDS, ID = 29A, RG = 4.7Ω
td(ON)
-
50 ns
Rise Time
VDD = 50% VDS, ID = 29A, RG = 4.7Ω
tr
- 95 ns
Turn-off Delay Time
VDD = 50% VDS, ID = 29A, RG = 4.7Ω
td(OFF)
-
80 ns
Fall Time
VDD = 50% VDS, ID = 29A, RG = 4.7Ω
tf
- 75 ns
Reverse Recovery Time
VDD < 50% VDS, ID = 45A
trr - 600 ns
Common Source Input Capacitance Ciss 3.5 6.5 nF
VDS = 100V, VGS = 0V, f = 1.0MHz
Common Source Output Capacitance
VDS = 100V, VGS = 0V, f = 1.0MHz
Coss
250 400 pF
Common Source
Reverse Transfer Capacitance
VDS = 100V, VGS = 0V, f = 1.0MHz
Crss
5
20 pF
Total Gate Charge
VDD = 50% VDS, VGS = 10V, ID = 45A
QG
-
100 nC
Notes.:
1) Pulsed Measurement: Pulse Width < 300µs, Duty Cycle <2.0%.
2) Measured within 2.0 mm of case.
IFAG PMM RFS D HIR
2 of 8
Preliminary Mar 2015


Part Number BUY25CS45B-01
Description HiRel RadHard Power-MOS
Maker Infineon
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