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Infineon
Infineon

CFH800 Datasheet Preview

CFH800 Datasheet

P-HEMT

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CFH800 pdf
P - HEMT
CFH800
________________________________________________________________________________________________________
Preliminary Datasheet
Features
Low noise figure and high associated gain for
high IP3 receiver stages up to 4GHz
Suitable for PCS CDMA and UMTS applications
(F = 0.50dB; Ga = 17dB @ 3V; 30mA; f=1.8GHz)
Low cost miniature package SOT343
LG = 0.4µm; WG = 800µm
Tape and Reel packaging
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Pin assignment:
1 = gate
2 = source
3 = drain
4 = source
Type
CFH 800
Marking
N8s
Ordering code
(taped)
on request
Package 1)
SOT343
Maximum ratings
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current
Channel temperature
Storage temperature range
Total power dissipation (TS < tbd°C) 2)
Symbol
VDS
VDG
VGS
ID
TCh
Tstg
Ptot
Thermal resistance
Channel-soldering point source
RthChS
1) Dimensions see page 7
2) TS: Temperature measured at soldering point
5.5
6.5
-2.0
160
150
-65...+150
350
198
Unit
V
V
V
mA
°C
°C
mW
K/W
Infineon Technologies
pg. 1/7
01.03.2002
WS GS CE GaAs



Infineon
Infineon

CFH800 Datasheet Preview

CFH800 Datasheet

P-HEMT

No Preview Available !

CFH800 pdf
P - HEMT
CFH800
________________________________________________________________________________________________________
Electrical characteristics at TA = 25°C
unless otherwise specified
Characteristics
Symbol
Drain-source saturation current
VDS = 3 V VGS = 0 V
Pinch-off voltage
VDS = 3 V ID = 1 mA
Gate leakage current
VDS = 3 V ID = 30 mA
Transconductance
VDS = 3 V ID = 30 mA
Noise figure*
VDS = 3 V ID = 10 mA
VDS = 3 V ID = 30 mA
f = 1.8 GHz
f = 1.8 GHz
Associated gain*
VDS = 3 V ID = 10 mA
VDS = 3 V ID = 30 mA
f = 1.8 GHz
f = 1.8 GHz
IIP3*
VDS = 3 V
VDS = 3 V
ID = 10 mA
ID = 30 mA
f = 1.8 GHz
f = 1.8 GHz
IDSS
VGS(P)
IG
gm
F
Ga
IIP3
min
0
-0.7
-
140
-
-
16
-
typ
80
-0.25
-
200
0.56
0.50
15
17
8.5
13
max
140
0.0
10
-
-
1
-
-
Unit
mA
V
µA
mS
dB
dB
dBm
* Parameters are measured for input impedance for minimum noise figure and output impedance for
maximum gain.
Infineon Technologies
pg. 2/7
01.03.2002
WS GS CE GaAs


Part Number CFH800
Description P-HEMT
Maker Infineon
Total Page 7 Pages
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CFH800 pdf
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