* Revolutionary semiconductor material - Silicon Carbide
* Benchmark switching behavior
* No reverse recovery/ No forward recovery
* Temperature independe.

* Breakdown voltage tested at 35 mA2)
* Optimized for high temperature operation Benefits
* System efficienc.

ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thinwafer technology, the new family of products shows improved efficiency over all load conditions, resultin.

D1664

D1666

D1667

D1668

D1669

D16-4148

D16-4150

D16000W

D1600C

D1600U

D1609

D1610

D1615