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Infineon Technologies Electronic Components Datasheet

DD1200S17H4_B2 Datasheet

IGBT-Module

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TechnischeInformation/TechnicalInformation
IGBT-Modul
IGBT-Module
DD1200S17H4_B2
IHM-BModul
IHM-Bmodule
TypischeAnwendungen
• 3-Level-Applikationen
• AktiverEingang(Rückspeisung)
• Hochleistungsumrichter
• Multi-LevelUmrichter
• Traktionsumrichter
• Windgeneratoren
ElektrischeEigenschaften
• ErweiterteSperrschichttemperaturTvjop
• HoheStromdichte
• Tvjop=150°C
MechanischeEigenschaften
• 4kVAC1minIsolationsfestigkeit
AlSiC Bodenplatte für erhöhte thermische
Lastwechselfestigkeit
• GehäusemitCTI>400
• GroßeLuft-undKriechstrecken
• HoheLast-undthermischeWechselfestigkeit
• HoheLeistungsdichte
• IHMBGehäuse
VCES = 1700V
IC nom = 1200A / ICRM = 2400A
TypicalApplications
• 3-level-applications
• Activefrontend(energyrecovery)
• Highpowerconverters
• Multilevelinverter
• Tractiondrives
• Windturbines
ElectricalFeatures
• ExtendedoperatingtemperatureTvjop
• Highcurrentdensity
• Tvjop=150°C
MechanicalFeatures
• 4kVAC1mininsulation
AlSiC base plate for increased thermal cycling
capability
• PackagewithCTI>400
• Highcreepageandclearancedistances
• Highpowerandthermalcyclingcapability
• Highpowerdensity
• IHMBhousing
ModuleLabelCode
BarcodeCode128
DMX-Code
preparedby:WB
approvedby:IB
ContentoftheCode
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
Digit
1-5
6-11
12-19
20-21
22-23
dateofpublication:2016-01-21
revision:V3.1
ULapproved(E83335)
1


Infineon Technologies Electronic Components Datasheet

DD1200S17H4_B2 Datasheet

IGBT-Module

No Preview Available !

TechnischeInformation/TechnicalInformation
IGBT-Modul
IGBT-Module
DD1200S17H4_B2
Diode,Wechselrichter/Diode,Inverter
HöchstzulässigeWerte/MaximumRatedValues
PeriodischeSpitzensperrspannung
Repetitivepeakreversevoltage
Tvj = -40°C
Tvj = 25°C
Tvj = 150°C
Dauergleichstrom
ContinuousDCforwardcurrent
PeriodischerSpitzenstrom
Repetitivepeakforwardcurrent
tP = 1 ms
Grenzlastintegral
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C
Spitzenverlustleistung
Maximumpowerdissipation
Tvj = 125°C
Mindesteinschaltdauer
Minimumturn-ontime
CharakteristischeWerte/CharacteristicValues
Durchlassspannung
Forwardvoltage
IF = 1200 A, VGE = 0 V
IF = 1200 A, VGE = 0 V
IF = 1200 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Rückstromspitze
Peakreverserecoverycurrent
IF = 1200 A, - diF/dt = 7900 A/µs (Tvj=150°C) Tvj = 25°C
VR = 900 V
Tvj = 125°C
VGE = -15 V
Tvj = 150°C
Sperrverzögerungsladung
Recoveredcharge
IF = 1200 A, - diF/dt = 7900 A/µs (Tvj=150°C) Tvj = 25°C
VR = 900 V
Tvj = 125°C
VGE = -15 V
Tvj = 150°C
AbschaltenergieproPuls
Reverserecoveryenergy
IF = 1200 A, - diF/dt = 7900 A/µs (Tvj=150°C) Tvj = 25°C
VR = 900 V
Tvj = 125°C
VGE = -15 V
Tvj = 150°C
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proDiode/perdiode
Wärmewiderstand,GehäusebisKühlkörper proDiode/perdiode
Thermalresistance,casetoheatsink
λPaste=1W/(m·K)/λgrease=1W/(m·K)
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions
VRRM 
IF 
IFRM 
I²t 
PRQM 
ton min 
1570
1700
1700
1200
2400
140
130
1200
10,0
V
A
A

kA²s
kA²s
 kW
 µs
VF
IRM
Qr
Erec
RthJC
min. typ. max.
1,80 2,10
1,90 2,10
1,95
V
V
V
1250
1350
1400
A
A
A
280 µC
460 µC
510 µC
180 mJ
310 mJ
350 mJ
31,9 K/kW
RthCH
32,5 K/kW
Tvj op
-40
150 °C
preparedby:WB
approvedby:IB
dateofpublication:2016-01-21
revision:V3.1
2


Part Number DD1200S17H4_B2
Description IGBT-Module
Maker Infineon
Total Page 7 Pages
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