DD1200S17H4_B2
DD1200S17H4_B2 is IGBT-Module manufactured by Infineon.
Features
- Extendedoperatingtemperature Tvjop
- Highcurrentdensity
- Tvjop=150°C
Mechanical Features
- 4k VAC1mininsulation
- Al Si C base plate for increased thermal cycling capability
- Packagewith CTI>400
- Highcreepageandclearancedistances
- Highpowerandthermalcyclingcapability
- Highpowerdensity
- IHMBhousing
Module Label Code
Barcode Code128
DMX-Code preparedby:WB approvedby:IB
Contentofthe Code Module Serial Number Module Material Number Production Order Number Datecode(Production Year) Datecode(Production Week)
Digit 1-5 6-11 12-19 20-21 22-23 dateofpublication:2016-01-21 revision:V3.1
ULapproved(E83335)
Technische Information/Technical Information
IGBT-Modul IGBT-Module
Diode,Wechselrichter/Diode,Inverter
Höchstzulässige Werte/Maximum Rated Values
Periodische Spitzensperrspannung Repetitivepeakreversevoltage
Tvj = -40°C Tvj = 25°C Tvj = 150°C
Dauergleichstrom Continuous DCforwardcurrent
Periodischer Spitzenstrom Repetitivepeakforwardcurrent t P = 1 ms
Grenzlastintegral I²t-value
VR = 0 V, t P = 10 ms, Tvj = 125°C VR = 0 V, t P = 10 ms, Tvj = 150°C
Spitzenverlustleistung Maximumpowerdissipation
Tvj = 125°C
Mindesteinschaltdauer Minimumturn-ontime
VRRM IF IFRM I²t
PRQM ton min
1570 1700 1700
140...
