Part DD1200S17H4_B2
Description IGBT-Module
Manufacturer Infineon
Size 574.37 KB
Infineon
DD1200S17H4_B2

Overview

  • ExtendedoperatingtemperatureTvjop
  • Highcurrentdensity
  • Tvjop=150°C MechanicalFeatures
  • 4kVAC1mininsulation
  • AlSiC base plate for increased thermal cycling capability
  • PackagewithCTI>400
  • Highcreepageandclearancedistances
  • Highpowerandthermalcyclingcapability
  • Highpowerdensity
  • IHMBhousing ModuleLabelCode BarcodeCode128 DMX-Code preparedby:WB approvedby:IB ContentoftheCode ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) Digit 1-5 6-11 12-19 20-21 22-23 dateofpublication:2016-01-21 revision:V3.1 ULapproved(E83335) 1 TechnischeInformation/TechnicalInformation IGBT-Modul IGBT-Module DD1200S17H4_B2 Diode,Wechselrichter/Diode,Inverter HöchstzulässigeWerte/MaximumRatedValues PeriodischeSpitzensperrspannung Repetitivepeakreversevoltage Tvj = -40°C Tvj = 25°C Tvj = 150°C Dauergleichstrom ContinuousDCforwardcurrent PeriodischerSpitzenstrom Repetitivepeakfor