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Infineon Technologies Electronic Components Datasheet

DDB6U75N16W1R Datasheet

IGBT

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TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
DDB6U75N16W1R
Diode,Gleichrichter/Diode,Rectifier
HöchstzulässigeWerte/MaximumRatedValues
PeriodischeSpitzensperrspannung
Repetitivepeakreversevoltage
Tvj = 25°C
DurchlassstromGrenzeffektivwertproChip
MaximumRMSforwardcurrentperchip
TC = 100°C
GleichrichterAusgangGrenzeffektivstrom
MaximumRMScurrentatrectifieroutput
TC = 100°C
StoßstromGrenzwert
Surgeforwardcurrent
tp = 10 ms, Tvj = 25°C
tp = 10 ms, Tvj = 150°C
Grenzlastintegral
I²t-value
tp = 10 ms, Tvj = 25°C
tp = 10 ms, Tvj = 150°C
CharakteristischeWerte/CharacteristicValues
Durchlassspannung
Forwardvoltage
Tvj = 150°C, IF = 65 A
Sperrstrom
Reversecurrent
Tvj = 150°C, VR = 1600 V
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proDiode/perdiode
Wärmewiderstand,GehäusebisKühlkörper proDiode/perdiode
Thermalresistance,casetoheatsink
λPaste=1W/(m·K)/λgrease=1W/(m·K)
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions

VorläufigeDaten
PreliminaryData
VRRM 
IFRMSM 
IRMSM 
IFSM 
I²t 
1600
65
90
605
470
1850
1100
V
A
A

A
A

A²s
A²s
min. typ. max.
VF  1,10  V
IR  1,00  mA
RthJC
 0,65 0,72 K/W
RthCH
 0,80
K/W
Tvj op


 °C
preparedby:DK
approvedby:MB
dateofpublication:2013-11-05
revision:2.0
1


Infineon Technologies Electronic Components Datasheet

DDB6U75N16W1R Datasheet

IGBT

No Preview Available !

TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
DDB6U75N16W1R
IGBT,Brems-Chopper/IGBT,Brake-Chopper
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Tvj = 25°C
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
TC = 100°C, Tvj max = 175°C
TC = 25°C, Tvj max = 175°C
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
tP = 1 ms
Gesamt-Verlustleistung
Totalpowerdissipation
TC = 25°C, Tvj max = 175°C
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage

VorläufigeDaten
PreliminaryData
VCES 
IC nom
IC

ICRM 
Ptot 
VGES 
1200
50
69
100
335
+/-20
V

A
A
A
W
V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
IC = 50 A, VGE = 15 V
IC = 50 A, VGE = 15 V
IC = 50 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Gate-Schwellenspannung
Gatethresholdvoltage
IC = 1,60 mA, VCE = VGE, Tvj = 25°C
Gateladung
Gatecharge
VGE = -15 V ... +15 V
InternerGatewiderstand
Internalgateresistor
Tvj = 25°C
Eingangskapazität
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Rückwirkungskapazität
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
VCE = 1200 V, VGE = 0 V, Tvj = 25°C
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
IC = 50 A, VCE = 600 V
VGE = ±15 V
RGon = 22
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Anstiegszeit,induktiveLast
Risetime,inductiveload
IC = 50 A, VCE = 600 V
VGE = ±15 V
RGon = 22
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
IC = 50 A, VCE = 600 V
VGE = ±15 V
RGoff = 22
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Fallzeit,induktiveLast
Falltime,inductiveload
IC = 50 A, VCE = 600 V
VGE = ±15 V
RGoff = 22
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
IC = 50 A, VCE = 600 V, LS = 45 nH
VGE = ±15 V
RGon = 22
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
IC = 50 A, VCE = 600 V, LS = 45 nH
Tvj = 25°C
VGE = ±15 V, du/dt = 3700 V/µs (Tvj = 150°C)Tvj = 125°C
RGoff = 22
Tvj = 150°C
Kurzschlußverhalten
SCdata
VGE 15 V, VCC = 800 V
VCEmax = VCES -LsCE ·di/dt
tP 10 µs, Tvj = 150°C
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proIGBT/perIGBT
Wärmewiderstand,GehäusebisKühlkörper proIGBT/perIGBT
Thermalresistance,casetoheatsink
λPaste=1W/(m·K)/λgrease=1W/(m·K)
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions

VCE sat
VGEth
QG
RGint
Cies
Cres
ICES
IGES
td on
tr
td off
tf
Eon
Eoff
ISC
RthJC
RthCH
Tvj op
min. typ. max.
1,85 2,15
2,15
2,25
V
V
V
5,2 5,8 6,4 V
 0,38  µC
 4,0 
 2,80  nF
 0,10  nF
  1,0 mA
  400 nA
0,08
 0,085 
0,085
0,044
 0,05 
0,052
0,37
 0,44 
0,46
0,10
 0,16 
0,17
4,70
 5,80 
6,00
3,10
 4,40 
4,90
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
mJ
mJ
mJ
mJ
mJ
mJ
 180 
A
 0,40 0,45 K/W
 0,65
K/W
-40  150 °C
preparedby:DK
approvedby:MB
dateofpublication:2013-11-05
revision:2.0
2


Part Number DDB6U75N16W1R
Description IGBT
Maker Infineon
Total Page 8 Pages
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