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ESD24VS2U Datasheet

Silicon TVS diodes

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Silicon TVS diodes
ESD / transient protection of CAN/LIN
bus networks power supply lines according to:
IEC61000-4-2 (ESD): ±30kV (air / contact)
IEC61000-4-4 (EFT): 80 A (5/50 ns)
IEC61000-4-5 (surge): 5 A (8/20µs)
ISO7637-2: Pulse 1 (max. 50 V),
Pulse 2 (max. 125 V), Pulse 3a, b (max.800 V)
Max. working voltage: 24 V
Low capacitance: 24 pF typ.
Low clamping voltage: < 41 V
Extremely low reverse current: < 1 nA typ.
Pb-free (RoHS compliant) package
Applications
Low and High-Speed CAN
Fault Tolerant CAN
Industrial control networks
12/24 V DC power supply lines
ESD24VS2U
ESD24VS2U
!
, ,

Type
Package
Configuration
ESD24VS2U
SOT23
2 lines, uni-directional*
* 1 line, bi-directional between pins 1 and 2, if pin 3 is not connested
Marking
EUs
1 2011-12-05


Infineon Technologies Electronic Components Datasheet

ESD24VS2U Datasheet

Silicon TVS diodes

No Preview Available !

ESD24VS2U
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
ESD contact discharge1)
Peak pulse current (tp = 8 / 20 µs)2)
Peak pulse power (tp = 8 / 20 µs)2)
VESD
Ipp
Ppk
Operating temperature range
Top
Storage temperature
Tstg
Value
30
5
230
-55...150
-65...150
Unit
kV
A
W
°C
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
Characteristics
Reverse working voltage
Breakdown voltage
I(BR) = 1 mA
Reverse current
VR = 24 V
Clamping voltage
IPP = 1 A, tp = 8 / 20 µs)2)
IPP = 5 A, tp = 8 / 20 µs)2)
Line capacitance3)
VR = 0 V, f = 1 MHz, (pins 1 to 2, pin 3 n.c.)
VR = 0 V, f = 1 MHz, (pins 1 or 2 to 3)
VRWM
V(BR)
IR
VCL
CT
- - 24
26 - 32
- <1 10
- 30 34
- 36 41
- 24 28
- 48 52
1VESD according to IEC61000-4-2. Device stressed with 10 positive / negative ESD pulses.
2Ipp according to IEC61000-4-5. Non-repetitive current pulse.
3Total capacitance line to ground (per linie)
Unit
V
nA
V
pF
2 2011-12-05


Part Number ESD24VS2U
Description Silicon TVS diodes
Maker Infineon
Total Page 10 Pages
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