* Low inductive design
* Low Switching Losses
* Low VCEsat Mechanical Features
* Al2O3 Substrate with Low Thermal Resistance
* Compact design
* PressFIT Contact Technology
* Rugged mounting due to integrated mounting clamps Module Label Code B
F3L15R12W2H3_B27 Datasheet (1.43 MB)
F3L15R12W2H3_B27
1.43 MB
Igbt.
Technische Information / Technical Information IGBT-Module IGBT-modules F3L15R12W2H3_B27 Vorläufige Daten / Preliminary Data J VCES = 1200V IC nom.
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