FF1800R17IP5
IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Tvj = 25°C
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
TC = 85°C, Tvj max = 175°C
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
tP = 1 ms
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage
VCES
ICDC
ICRM
VGES
1700
1800
3600
+/-20
V
A
A
V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
IC = 1800 A
VGE = 15 V
Gate-Schwellenspannung
Gatethresholdvoltage
IC = 64,0 mA, VCE = VGE, Tvj = 25°C
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
Gateladung
Gatecharge
VGE = -15 / 15 V, VCE = 900 V
InternerGatewiderstand
Internalgateresistor
Tvj = 25°C
Eingangskapazität
Inputcapacitance
f = 1000 kHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Rückwirkungskapazität
Reversetransfercapacitance
f = 1000 kHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
VCE = 1700 V, VGE = 0 V, Tvj = 25°C
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
IC = 1800 A, VCE = 900 V
VGE = -15 / 15 V
RGon = 0,56 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
Anstiegszeit,induktiveLast
Risetime,inductiveload
IC = 1800 A, VCE = 900 V
VGE = -15 / 15 V
RGon = 0,56 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
IC = 1800 A, VCE = 900 V
VGE = -15 / 15 V
RGoff = 0,68 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
Fallzeit,induktiveLast
Falltime,inductiveload
IC = 1800 A, VCE = 900 V
VGE = -15 / 15 V
RGoff = 0,68 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
IC = 1800 A, VCE = 900 V, Lσ = 30 nH
di/dt = 9100 A/µs (Tvj = 175°C)
VGE = -15 / 15 V, RGon = 0,56 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
IC = 1800 A, VCE = 900 V, Lσ = 30 nH
du/dt = 2500 V/µs (Tvj = 175°C)
VGE = -15 / 15 V, RGoff = 0,68 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
Kurzschlußverhalten
SCdata
VGE ≤ 15 V, VCC = 1000 V
VCEmax = VCES -LsCE ·di/dt
tP ≤ 10 µs, Tvj = 175°C
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proIGBT/perIGBT
Wärmewiderstand,GehäusebisKühlkörper proIGBT/perIGBT
Thermalresistance,casetoheatsink
λPaste=1W/(m·K)/λgrease=1W/(m·K)
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions
VCE sat
min. typ. max.
1,75 2,20
2,10 2,65
2,30 2,90
V
V
V
VGEth 5,35 5,80 6,25 V
QG 9,00 µC
RGint
0,8 Ω
Cies 105 nF
Cres 3,20 nF
ICES 5,0 mA
IGES
td on
tr
td off
tf
Eon
Eoff
ISC
RthJC
400 nA
0,31 µs
0,33 µs
0,34 µs
0,17 µs
0,18 µs
0,19 µs
0,71 µs
0,80 µs
0,85 µs
0,14 µs
0,18 µs
0,21 µs
405 mJ
600 mJ
725 mJ
485 mJ
680 mJ
780 mJ
7200
A
16,5 K/kW
RthCH
14,0 K/kW
Tvj op
-40
175 °C
Datasheet
2 V3.4
2019-10-16
