900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Infineon Technologies Electronic Components Datasheet

FF1800R17IP5 Datasheet

IGBT-Module

No Preview Available !

FF1800R17IP5
PrimePACK™3+B-SerienModulmitTrench/FeldstoppIGBT5,EmitterControlled5DiodeundNTC
PrimePACK™3+B-seriesmodulewithTrench/FieldstopIGBT5,EmitterControlled5diodeandNTC
PotentielleAnwendungen
• Hochleistungsumrichter
• Motorantriebe
• Traktionsumrichter
• Windgeneratoren
ElektrischeEigenschaften
• ErweiterteSperrschichttemperaturTvjop
• HoheStromdichte
• NiedrigeSchaltverluste
• NiedrigesVCEsat
• Tvjop=175°C
MechanischeEigenschaften
• GehäusemitCTI>400
• GroßeLuft-undKriechstrecken
• HoheLast-undthermischeWechselfestigkeit
• HoheLeistungsdichte
VCES = 1700V
IC nom = 1800A / ICRM = 3600A
PotentialApplications
• Highpowerconverters
• Motordrives
• Tractiondrives
• Windturbines
ElectricalFeatures
• ExtendedoperatingtemperatureTvjop
• Highcurrentdensity
• Lowswitchinglosses
• LowVCEsat
• Tvjop=175°C
MechanicalFeatures
• PackagewithCTI>400
• Highcreepageandclearancedistances
• Highpowerandthermalcyclingcapability
• Highpowerdensity
ModuleLabelCode
BarcodeCode128
DMX-Code
ContentoftheCode
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
Digit
1-5
6-11
12-19
20-21
22-23
Datasheet
www.infineon.com
PleasereadtheImportantNoticeandWarningsattheendofthisdocument
V3.4
2019-10-16


Infineon Technologies Electronic Components Datasheet

FF1800R17IP5 Datasheet

IGBT-Module

No Preview Available !

FF1800R17IP5
IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Tvj = 25°C
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
TC = 85°C, Tvj max = 175°C
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
tP = 1 ms
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage
VCES 
ICDC 
ICRM 
VGES 
1700
1800
3600
+/-20
V
A
A
V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
IC = 1800 A
VGE = 15 V
Gate-Schwellenspannung
Gatethresholdvoltage
IC = 64,0 mA, VCE = VGE, Tvj = 25°C
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
Gateladung
Gatecharge
VGE = -15 / 15 V, VCE = 900 V
InternerGatewiderstand
Internalgateresistor
Tvj = 25°C
Eingangskapazität
Inputcapacitance
f = 1000 kHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Rückwirkungskapazität
Reversetransfercapacitance
f = 1000 kHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
VCE = 1700 V, VGE = 0 V, Tvj = 25°C
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
IC = 1800 A, VCE = 900 V
VGE = -15 / 15 V
RGon = 0,56
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
Anstiegszeit,induktiveLast
Risetime,inductiveload
IC = 1800 A, VCE = 900 V
VGE = -15 / 15 V
RGon = 0,56
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
IC = 1800 A, VCE = 900 V
VGE = -15 / 15 V
RGoff = 0,68
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
Fallzeit,induktiveLast
Falltime,inductiveload
IC = 1800 A, VCE = 900 V
VGE = -15 / 15 V
RGoff = 0,68
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
IC = 1800 A, VCE = 900 V, Lσ = 30 nH
di/dt = 9100 A/µs (Tvj = 175°C)
VGE = -15 / 15 V, RGon = 0,56
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
IC = 1800 A, VCE = 900 V, Lσ = 30 nH
du/dt = 2500 V/µs (Tvj = 175°C)
VGE = -15 / 15 V, RGoff = 0,68
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
Kurzschlußverhalten
SCdata
VGE 15 V, VCC = 1000 V
VCEmax = VCES -LsCE ·di/dt
tP 10 µs, Tvj = 175°C
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proIGBT/perIGBT
Wärmewiderstand,GehäusebisKühlkörper proIGBT/perIGBT
Thermalresistance,casetoheatsink
λPaste=1W/(m·K)/λgrease=1W/(m·K)
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions
VCE sat
min. typ. max.
1,75 2,20
2,10 2,65
2,30 2,90
V
V
V
VGEth 5,35 5,80 6,25 V
QG 9,00 µC
RGint
0,8
Cies 105 nF
Cres 3,20 nF
ICES 5,0 mA
IGES
td on
tr
td off
tf
Eon
Eoff
ISC
RthJC
400 nA
0,31 µs
0,33 µs
0,34 µs
0,17 µs
0,18 µs
0,19 µs
0,71 µs
0,80 µs
0,85 µs
0,14 µs
0,18 µs
0,21 µs
405 mJ
600 mJ
725 mJ
485 mJ
680 mJ
780 mJ
7200
A
16,5 K/kW
RthCH
14,0 K/kW
Tvj op
-40
175 °C
Datasheet
2 V3.4
2019-10-16


Part Number FF1800R17IP5
Description IGBT-Module
Maker Infineon
PDF Download

FF1800R17IP5 Datasheet PDF






Similar Datasheet

1 FF1800R17IP5 IGBT-Module
Infineon
2 FF1800R17IP5P IGBT
Infineon





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy