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Infineon Technologies Electronic Components Datasheet

FF600R12IS4F Datasheet

IGBT-Module

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TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
FF600R12IS4F
PrimePACK™2ModulmitschnellemIGBT2undSiCDiodefürhochfrequentesSchaltenundNTC
PrimePACK™2modulewithfastIGBT2andSiCDiodeforhighfrequencyswitchingandNTC
VorläufigeDaten/PreliminaryData
TypischeAnwendungen
• AnwendungenmithohenSchaltfrequenzen
• MedizinischeAnwendungen
ElektrischeEigenschaften
• NiedrigeSchaltverluste
• VCEsatmitpositivemTemperaturkoeffizienten
MechanischeEigenschaften
• 4kVAC1minIsolationsfestigkeit
• GehäusemitCTI>400
• GroßeLuft-undKriechstrecken
• SubstratfürkleinenthermischenWiderstand
VCES = 1200V
IC nom = 600A / ICRM = 1200A
TypicalApplications
• HighFrequencySwitchingApplication
• MedicalApplications
ElectricalFeatures
• LowSwitchingLosses
• VCEsatwithpositiveTemperatureCoefficient
MechanicalFeatures
• 4kVAC1minInsulation
• PackagewithCTI>400
• HighCreepageandClearanceDistances
• SubstrateforLowThermalResistance
ModuleLabelCode
BarcodeCode128
DMX-Code
preparedby:GB
approvedby:MS
ContentoftheCode
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
dateofpublication:2013-03-06
revision:2.5
1
Digit
1-5
6-11
12-19
20-21
22-23


Infineon Technologies Electronic Components Datasheet

FF600R12IS4F Datasheet

IGBT-Module

No Preview Available !

TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
FF600R12IS4F
IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Tvj = 25°C
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
TC = 55°C, Tvj = 150°C
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
tP = 1 ms
Gesamt-Verlustleistung
Totalpowerdissipation
TC = 25°C, Tvj = 150°C
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage

VorläufigeDaten
PreliminaryData
VCES 
IC nom 
ICRM 
Ptot 
VGES 
1200
600
1200
3,70
+/-20
V
A
A
 kW
V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
IC = 600 A, VGE = 15 V
IC = 600 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Gate-Schwellenspannung
Gatethresholdvoltage
IC = 24,0 mA, VCE = VGE, Tvj = 25°C
Gateladung
Gatecharge
VGE = -15 V ... +15 V, VCE = 25V
InternerGatewiderstand
Internalgateresistor
Tvj = 25°C
Eingangskapazität
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Rückwirkungskapazität
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
VCE = 1200 V, VGE = 0 V, Tvj = 25°C
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
IC = 600 A, VCE = 600 V
VGE = ±15 V
RGon = 0,5
Tvj = 25°C
Tvj = 125°C
Anstiegszeit,induktiveLast
Risetime,inductiveload
IC = 600 A, VCE = 600 V
VGE = ±15 V
RGon = 0,5
Tvj = 25°C
Tvj = 125°C
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
IC = 600 A, VCE = 600 V
VGE = ±15 V
RGoff = 0,5
Tvj = 25°C
Tvj = 125°C
Fallzeit,induktiveLast
Falltime,inductiveload
IC = 600 A, VCE = 600 V
VGE = ±15 V
RGoff = 0,5
Tvj = 25°C
Tvj = 125°C
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
IC = 600 A, VCE = 600 V, LS = 42 nH
Tvj = 25°C
VGE = ±15 V, di/dt = 6800 A/µs (Tvj=125°C) Tvj = 125°C
RGon = 0,5
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
IC = 600 A, VCE = 600 V, LS = 42 nH
Tvj = 25°C
VGE = ±15 V, du/dt = 5000 V/µs (Tvj=125°C) Tvj = 125°C
RGoff = 0,5
Kurzschlußverhalten
SCdata
VGE 15 V, VCC = 900 V
VCEmax = VCES -LsCE ·di/dt
tP 10 µs, Tvj = 125°C
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proIGBT/perIGBT
Wärmewiderstand,GehäusebisKühlkörper proIGBT/perIGBT
Thermalresistance,casetoheatsink
λPaste=1W/(m·K)/λgrease=1W/(m·K)
VCE sat
VGEth
QG
RGint
Cies
Cres
ICES
IGES
td on
tr
td off
tf
Eon
Eoff
ISC
RthJC
RthCH
min. typ. max.
3,20 3,75
3,80
V
V
4,5 5,5 6,5 V
 6,30  µC
 1,3 
 39,0  nF
 2,60  nF
  5,0 mA
  400 nA
0,20
 0,20 
µs
µs
0,06
 0,07 
µs
µs
0,53
 0,55 
µs
µs
0,07
 0,08 
µs
µs
10,0 mJ
 20,0  mJ
35,0 mJ
 40,0  mJ
 3900 
A
  34,0 K/kW
 13,0 K/kW
preparedby:GB
approvedby:MS
dateofpublication:2013-03-06
revision:2.5
2


Part Number FF600R12IS4F
Description IGBT-Module
Maker Infineon
Total Page 9 Pages
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