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Infineon Technologies Electronic Components Datasheet

FP25R12W1T7_B11 Datasheet

IGBT-Module

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FP25R12W1T7_B11
EasyPIM™ModulmitTRENCHSTOP™IGBT7undEmitterControlled7DiodeundPressFIT/NTC
EasyPIM™modulewithTRENCHSTOP™IGBT7andEmitterControlled7diodeandPressFIT/NTC
VorläufigeDaten/PreliminaryData
PotentielleAnwendungen
• Hilfsumrichter
• Klimaanlagen
• Motorantriebe
ElektrischeEigenschaften
• NiedrigesVCEsat
• TrenchstopTMIGBT7
• Überlastbetriebbiszu175°C
MechanischeEigenschaften
• 2,5kVAC1minIsolationsfestigkeit
Al2O3 Substrat mit kleinem thermischen
Widerstand
• HoheLeistungsdichte
• KompaktesDesign
• PressFITVerbindungstechnik
VCES = 1200V
IC nom = 25A / ICRM = 50A
PotentialApplications
• Auxiliaryinverters
• Airconditioning
• Motordrives
ElectricalFeatures
• LowVCEsat
• TrenchstopTMIGBT7
• Overloadoperationupto175°C
MechanicalFeatures
• 2.5kVAC1mininsulation
• Al2O3substratewithlowthermalresistance
• Highpowerdensity
• Compactdesign
• PressFITcontacttechnology
ModuleLabelCode
BarcodeCode128
DMX-Code
ContentoftheCode
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
Digit
1-5
6-11
12-19
20-21
22-23
Datasheet
www.infineon.com
PleasereadtheImportantNoticeandWarningsattheendofthisdocument
V2.0
2018-12-13


Infineon Technologies Electronic Components Datasheet

FP25R12W1T7_B11 Datasheet

IGBT-Module

No Preview Available !

FP25R12W1T7_B11
IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Tvj = 25°C
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
TH = 60°C, Tvj max = 175°C
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
tP = 1 ms
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage
VorläufigeDaten
PreliminaryData
VCES 
ICDC 
ICRM 
VGES 
1200
25
50
+/-20
V
A
A
V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
IC = 25 A
VGE = 15 V
Gate-Schwellenspannung
Gatethresholdvoltage
IC = 0,50 mA, VCE = VGE, Tvj = 25°C
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
Gateladung
Gatecharge
VGE = -15 / 15 V, VCE = 600 V
InternerGatewiderstand
Internalgateresistor
Tvj = 25°C
Eingangskapazität
Inputcapacitance
f = 100 kHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Rückwirkungskapazität
Reversetransfercapacitance
f = 100 kHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
VCE = 1200 V, VGE = 0 V, Tvj = 25°C
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
IC = 25 A, VCE = 600 V
VGE = -15 / 15 V
RGon = 6,2
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
Anstiegszeit,induktiveLast
Risetime,inductiveload
IC = 25 A, VCE = 600 V
VGE = -15 / 15 V
RGon = 6,2
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
IC = 25 A, VCE = 600 V
VGE = -15 / 15 V
RGoff = 6,2
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
Fallzeit,induktiveLast
Falltime,inductiveload
IC = 25 A, VCE = 600 V
VGE = -15 / 15 V
RGoff = 6,2
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
IC = 25 A, VCE = 600 V, Lσ = 35 nH
di/dt = 950 A/µs (Tvj = 175°C)
VGE = -15 / 15 V, RGon = 6,2
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
IC = 25 A, VCE = 600 V, Lσ = 35 nH
du/dt = 2700 V/µs (Tvj = 175°C)
VGE = -15 / 15 V, RGoff = 6,2
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
Kurzschlußverhalten
SCdata
VGE 15 V, VCC = 800 V
VCEmax = VCES -LsCE ·di/dt
tP 8 µs, Tvj = 150°C
tP 7 µs, Tvj = 175°C
Wärmewiderstand,ChipbisKühlkörper
Thermalresistance,junctiontoheatsink
proIGBT/perIGBT
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions
VCE sat
min. typ. max.
1,60 t.b.d.
1,74
1,82
V
V
V
VGEth 5,15 5,80 6,45 V
QG
0,395
µC
RGint
0,0
Cies 4,77 nF
Cres
0,017
nF
ICES 0,0056 mA
IGES
td on
tr
td off
tf
Eon
Eoff
ISC
RthJH
100 nA
0,037
0,039
0,04
0,02
0,024
0,025
0,20
0,28
0,38
0,18
0,29
0,35
1,55
2,10
2,45
2,10
3,05
3,65
80
75
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
mJ
mJ
mJ
mJ
mJ
mJ
A
A
1,55 K/W
Tvj op
-40
175 °C
Datasheet
2 V2.0
2018-12-13


Part Number FP25R12W1T7_B11
Description IGBT-Module
Maker Infineon
Total Page 14 Pages
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