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Infineon Technologies Electronic Components Datasheet

FS75R12KT4_B15 Datasheet

IGBT-Module

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TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
FS75R12KT4_B15
EconoPACK™2ModulmitTrench/FeldstoppIGBT4undEmitterControlled4DiodeundNTC
EconoPACK™2modulewithTrench/FieldstopIGBT4andEmitterControlled4diodeandNTC
TypischeAnwendungen
• Hilfsumrichter
• Motorantriebe
• Servoumrichter
ElektrischeEigenschaften
• NiedrigesVCEsat
• TrenchIGBT4
• Tvjop=150°C
• VCEsatmitpositivemTemperaturkoeffizienten
MechanischeEigenschaften
Al2O3 Substrat mit kleinem thermischen
Widerstand
• HoheLast-undthermischeWechselfestigkeit
• IntegrierterNTCTemperaturSensor
• Kupferbodenplatte
• Standardgehäuse
VCES = 1200V
IC nom = 75A / ICRM = 150A
TypicalApplications
• AuxiliaryInverters
• MotorDrives
• ServoDrives
ElectricalFeatures
• LowVCEsat
• TrenchIGBT4
• Tvjop=150°C
• VCEsatwithpositiveTemperatureCoefficient
MechanicalFeatures
• Al2O3SubstratewithLowThermalResistance
• HighPowerandThermalCyclingCapability
• IntegratedNTCtemperaturesensor
• CopperBasePlate
• StandardHousing
ModuleLabelCode
BarcodeCode128
DMX-Code
preparedby:NK
approvedby:RS
ContentoftheCode
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
Digit
1-5
6-11
12-19
20-21
22-23
dateofpublication:2013-11-04
revision:3.0
ULapproved(E83335)
1


Infineon Technologies Electronic Components Datasheet

FS75R12KT4_B15 Datasheet

IGBT-Module

No Preview Available !

TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
FS75R12KT4_B15
IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Tvj = 25°C
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
TC = 95°C, Tvj max = 175°C
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
tP = 1 ms
Gesamt-Verlustleistung
Totalpowerdissipation
TC = 25°C, Tvj max = 175°C
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage

VCES 
IC nom 
ICRM 
Ptot 
VGES 
1200
75
150
385
+/-20
V
A
A
W
V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
IC = 75 A, VGE = 15 V
IC = 75 A, VGE = 15 V
IC = 75 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Gate-Schwellenspannung
Gatethresholdvoltage
IC = 2,40 mA, VCE = VGE, Tvj = 25°C
Gateladung
Gatecharge
VGE = -15 V ... +15 V
InternerGatewiderstand
Internalgateresistor
Tvj = 25°C
Eingangskapazität
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Rückwirkungskapazität
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
VCE = 1200 V, VGE = 0 V, Tvj = 25°C
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
IC = 75 A, VCE = 600 V
VGE = ±15 V
RGon = 2,2
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Anstiegszeit,induktiveLast
Risetime,inductiveload
IC = 75 A, VCE = 600 V
VGE = ±15 V
RGon = 2,2
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
IC = 75 A, VCE = 600 V
VGE = ±15 V
RGoff = 2,2
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Fallzeit,induktiveLast
Falltime,inductiveload
IC = 75 A, VCE = 600 V
VGE = ±15 V
RGoff = 2,2
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
IC = 75 A, VCE = 600 V, LS = 25 nH
Tvj = 25°C
VGE = ±15 V, di/dt = 2800 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 2,2
Tvj = 150°C
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
IC = 75 A, VCE = 600 V, LS = 25 nH
Tvj = 25°C
VGE = ±15 V, du/dt = 3800 V/µs (Tvj = 150°C)Tvj = 125°C
RGoff = 2,2
Tvj = 150°C
Kurzschlußverhalten
SCdata
VGE 15 V, VCC = 800 V
VCEmax = VCES -LsCE ·di/dt
tP 10 µs, Tvj = 150°C
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proIGBT/perIGBT
Wärmewiderstand,GehäusebisKühlkörper proIGBT/perIGBT
Thermalresistance,casetoheatsink
λPaste=1W/(m·K)/λgrease=1W/(m·K)
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions

VCE sat
VGEth
QG
RGint
Cies
Cres
ICES
IGES
td on
tr
td off
tf
Eon
Eoff
ISC
RthJC
RthCH
Tvj op
min. typ. max.
1,85 2,15
2,15
2,25
V
V
V
5,2 5,8 6,4 V
 0,57  µC
 10 
 4,30  nF
 0,16  nF
  1,0 mA
  100 nA
0,13
 0,15 
0,15
0,02
 0,03 
0,035
0,30
 0,38 
0,40
0,045
 0,08 
0,09
4,70
 7,20 
8,00
3,90
 6,10 
6,40
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
mJ
mJ
mJ
mJ
mJ
mJ
 270 
A
  0,39 K/W
 0,195
K/W
-40  150 °C
preparedby:NK
approvedby:RS
dateofpublication:2013-11-04
revision:3.0
2


Part Number FS75R12KT4_B15
Description IGBT-Module
Maker Infineon
Total Page 9 Pages
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