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Infineon Technologies Electronic Components Datasheet

FZ300R12KE3G Datasheet

IGBT-Module

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TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
FZ300R12KE3G
62mmC-SerienModulmitTrench/FeldstopIGBT3undEmitterControlledHighEfficiencyDiode
62mmC-seriesmodulewiththetrench/fieldstopIGBT3andEmitterControlledHighEfficiencydiode
IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Tvj = 25°C
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
TC = 80°C, Tvj max = 150°C
TC = 25°C, Tvj max = 150°C
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
tP = 1 ms
Gesamt-Verlustleistung
Totalpowerdissipation
TC = 25°C, Tvj max = 150
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage

VCES 
IC nom
IC

ICRM 
Ptot 
VGES 
1200
300
480
600
1450
+/-20
V

A
A
A
W
V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
IC = 300 A, VGE = 15 V
IC = 300 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Gate-Schwellenspannung
Gatethresholdvoltage
IC = 12,0 mA, VCE = VGE, Tvj = 25°C
Gateladung
Gatecharge
VGE = -15 V ... +15 V
InternerGatewiderstand
Internalgateresistor
Tvj = 25°C
Eingangskapazität
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Rückwirkungskapazität
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
VCE = 1200 V, VGE = 0 V, Tvj = 25°C
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
IC = 300 A, VCE = 600 V
VGE = ±15 V
RGon = 2,4
Tvj = 25°C
Tvj = 125°C
Anstiegszeit,induktiveLast
Risetime,inductiveload
IC = 300 A, VCE = 600 V
VGE = ±15 V
RGon = 2,4
Tvj = 25°C
Tvj = 125°C
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
IC = 300 A, VCE = 600 V
VGE = ±15 V
RGoff = 2,4
Tvj = 25°C
Tvj = 125°C
Fallzeit,induktiveLast
Falltime,inductiveload
IC = 300 A, VCE = 600 V
VGE = ±15 V
RGoff = 2,4
Tvj = 25°C
Tvj = 125°C
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
IC = 300 A, VCE = 600 V, LS = 85 nH
VGE = ±15 V
RGon = 2,4
Tvj = 25°C
Tvj = 125°C
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
IC = 300 A, VCE = 600 V, LS = 85 nH
VGE = ±15 V
RGoff = 2,4
Tvj = 25°C
Tvj = 125°C
Kurzschlußverhalten
SCdata
VGE 15 V, VCC = 900 V
VCEmax = VCES -LsCE ·di/dt
tP 10 µs, Tvj = 125°C
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proIGBT/perIGBT
Wärmewiderstand,GehäusebisKühlkörper proIGBT/perIGBT
Thermalresistance,casetoheatsink
λPaste=1W/(m·K)/λgrease=1W/(m·K)
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions

VCE sat
VGEth
QG
RGint
Cies
Cres
ICES
IGES
td on
tr
td off
tf
Eon
Eoff
ISC
RthJC
RthCH
Tvj op
min. typ. max.
1,70 2,15
2,00
V
V
5,0 5,8 6,5 V
 2,80  µC
 2,5 
 21,0  nF
 0,85  nF
  5,0 mA
  400 nA
0,25
 0,30 
µs
µs
0,09
 0,10 
µs
µs
0,55
 0,65 
µs
µs
0,13
 0,18 
µs
µs
mJ
 25,0  mJ
mJ
 44,0  mJ
 1200 
A
  0,085 K/W
 0,016
K/W
-40  125 °C
preparedby:MM
approvedby:WR
dateofpublication:2013-10-02
revision:3.2
1


Infineon Technologies Electronic Components Datasheet

FZ300R12KE3G Datasheet

IGBT-Module

No Preview Available !

TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
FZ300R12KE3G
Diode,Wechselrichter/Diode,Inverter
HöchstzulässigeWerte/MaximumRatedValues
PeriodischeSpitzensperrspannung
Repetitivepeakreversevoltage
Tvj = 25°C
Dauergleichstrom
ContinuousDCforwardcurrent

PeriodischerSpitzenstrom
Repetitivepeakforwardcurrent
tP = 1 ms
Grenzlastintegral
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
CharakteristischeWerte/CharacteristicValues
Durchlassspannung
Forwardvoltage
IF = 300 A, VGE = 0 V
IF = 300 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Rückstromspitze
Peakreverserecoverycurrent
IF = 300 A, - diF/dt = 3000 A/µs (Tvj=125°C) Tvj = 25°C
VR = 600 V
Tvj = 125°C
VGE = -15 V
Sperrverzögerungsladung
Recoveredcharge
IF = 300 A, - diF/dt = 3000 A/µs (Tvj=125°C) Tvj = 25°C
VR = 600 V
Tvj = 125°C
VGE = -15 V
AbschaltenergieproPuls
Reverserecoveryenergy
IF = 300 A, - diF/dt = 3000 A/µs (Tvj=125°C) Tvj = 25°C
VR = 600 V
Tvj = 125°C
VGE = -15 V
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proDiode/perdiode
Wärmewiderstand,GehäusebisKühlkörper proDiode/perdiode
Thermalresistance,casetoheatsink
λPaste=1W/(m·K)/λgrease=1W/(m·K)
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions

VRRM 
IF 
IFRM 
I²t 
1200
300
600
19000
V
A
A
 A²s
min. typ. max.
VF
1,65 2,15 V
1,65 V
210 A
IRM  270  A
30,0 µC
Qr  56,0  µC
14,0 mJ
Erec  26,0  mJ
RthJC

 0,15 K/W
RthCH
 0,028
K/W
Tvj op
-40

125 °C
preparedby:MM
approvedby:WR
dateofpublication:2013-10-02
revision:3.2
2


Part Number FZ300R12KE3G
Description IGBT-Module
Maker Infineon
Total Page 8 Pages
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