900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Infineon Technologies Electronic Components Datasheet

FZ600R17KE4 Datasheet

IGBT-Module

No Preview Available !

TechnischeInformation/TechnicalInformation
IGBT-Modul
IGBT-Module
FZ600R17KE4
62mmC-SerienModulmitTrench/FeldstoppIGBT4undEmitterControlledDiode
62mmC-SeriesmodulewithTrench/FieldstopIGBT4andEmitterControlleddiode
VorläufigeDaten/PreliminaryData
TypischeAnwendungen
• Hochleistungsumrichter
• Motorantriebe
• USV-Systeme
• Windgeneratoren
ElektrischeEigenschaften
• ErweiterteSperrschichttemperaturTvjop
• NiedrigesVCEsat
• SehrgroßeRobustheit
• VCEsatmitpositivemTemperaturkoeffizienten
MechanischeEigenschaften
• 4kVAC1minIsolationsfestigkeit
• GehäusemitCTI>400
• GroßeLuft-undKriechstrecken
• IsolierteBodenplatte
• Standardgehäuse
VCES = 1700V
IC nom = 600A / ICRM = 1200A
TypicalApplications
• Highpowerconverters
• Motordrives
• UPSsystems
• Windturbines
ElectricalFeatures
• ExtendedoperatingtemperatureTvjop
• LowVCEsat
• Unbeatablerobustness
• VCEsatwithpositivetemperaturecoefficient
MechanicalFeatures
• 4kVAC1mininsulation
• PackagewithCTI>400
• Highcreepageandclearancedistances
• Isolatedbaseplate
• Standardhousing
ModuleLabelCode
BarcodeCode128
DMX-Code
preparedby:CU
approvedby:MK
ContentoftheCode
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
Digit
1-5
6-11
12-19
20-21
22-23
dateofpublication:2015-12-18
revision:V2.3
ULapproved(E83335)
1


Infineon Technologies Electronic Components Datasheet

FZ600R17KE4 Datasheet

IGBT-Module

No Preview Available !

TechnischeInformation/TechnicalInformation
IGBT-Modul
IGBT-Module
FZ600R17KE4
IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Tvj = 25°C
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
TC = 100°C, Tvj max = 175°C
TC = 25°C, Tvj max = 175°C
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
tP = 1 ms
Gesamt-Verlustleistung
Totalpowerdissipation
TC = 25°C, Tvj max = 175°C
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage
VorläufigeDaten
PreliminaryData
VCES 
IC nom
IC

ICRM 
Ptot 
VGES 
1700
600
840
1200
3350
+/-20
V

A
A
A
W
V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
IC = 600 A, VGE = 15 V
IC = 600 A, VGE = 15 V
IC = 600 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Gate-Schwellenspannung
Gatethresholdvoltage
IC = 24,0 mA, VCE = VGE, Tvj = 25°C
Gateladung
Gatecharge
VGE = -15 V ... +15 V
InternerGatewiderstand
Internalgateresistor
Tvj = 25°C
Eingangskapazität
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Rückwirkungskapazität
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
VCE = 1700 V, VGE = 0 V, Tvj = 25°C
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
IC = 600 A, VCE = 900 V
VGE = ±15 V
RGon = 1,2
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Anstiegszeit,induktiveLast
Risetime,inductiveload
IC = 600 A, VCE = 900 V
VGE = ±15 V
RGon = 1,2
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
IC = 600 A, VCE = 900 V
VGE = ±15 V
RGoff = 1,2
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Fallzeit,induktiveLast
Falltime,inductiveload
IC = 600 A, VCE = 900 V
VGE = ±15 V
RGoff = 1,2
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
IC = 600 A, VCE = 900 V, LS = 60 nH
Tvj = 25°C
VGE = ±15 V, di/dt = 6200 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 1,2
Tvj = 150°C
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
IC = 600 A, VCE = 900 V, LS = 60 nH
Tvj = 25°C
VGE = ±15 V, du/dt = 3600 V/µs (Tvj = 150°C)Tvj = 125°C
RGoff = 1,2
Tvj = 150°C
Kurzschlußverhalten
SCdata
VGE 15 V, VCC = 1000 V
VCEmax = VCES -LsCE ·di/dt
tP 10 µs, Tvj = 150°C
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proIGBT/perIGBT
Wärmewiderstand,GehäusebisKühlkörper proIGBT/perIGBT
Thermalresistance,casetoheatsink
λPaste=1W/(m·K)/λgrease=1W/(m·K)
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions
VCE sat
min. typ. max.
1,95 2,30
2,35
2,45
V
V
V
VGEth 5,20 5,80 6,40 V
QG 6,10 µC
RGint
1,3
Cies 49,0 nF
Cres 1,60 nF
ICES 1,0 mA
IGES
td on
tr
td off
tf
Eon
Eoff
ISC
RthJC
100 nA
0,24
0,28
0,30
0,05
0,055
0,055
0,70
0,74
0,78
0,08
0,13
0,15
85,0
120
135
110
180
200
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
mJ
mJ
mJ
mJ
mJ
mJ
2700
A
0,0450 K/W
RthCH
0,0170
K/W
Tvj op
-40
150 °C
preparedby:CU
approvedby:MK
dateofpublication:2015-12-18
revision:V2.3
2


Part Number FZ600R17KE4
Description IGBT-Module
Maker Infineon
Total Page 9 Pages
PDF Download

FZ600R17KE4 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 FZ600R17KE3 IGBT-Module
Infineon
2 FZ600R17KE3_S4 IGBT
Infineon
3 FZ600R17KE4 IGBT-Module
Infineon





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy