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FZ750R65KE3 - IGBT

Description

Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document Revision 1.10 2021-10-20 FZ750R65KE3 Highly insulated module Table of contents Table of contents Description

Features

  • Electrical features - VCES = 6500 V - IC nom = 750 A / ICRM = 1500 A - Low VCE,sat.
  • Mechanical features - High creepage and clearance distances - Package with enhanced insulation of 10.4 kV AC 60 s - Package with CTI > 600 - AlSiC base plate for increased thermal cycling capability - Extended storage temperature down to Tstg = -55 °C Potential.

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    FZ750R65KE3 Highly insulated module Highly insulated module with Trench/Fieldstop IGBT3 and emitter controlled 3 diode Features • Electrical features - VCES = 6500 V - IC nom = 750 A / ICRM = 1500 A - Low VCE,sat • Mechanical features - High creepage and clearance distances - Package with enhanced insulation of 10.4 kV AC 60 s - Package with CTI > 600 - AlSiC base plate for increased thermal cycling capability - Extended storage temperature down to Tstg = -55 °C Potential applications • Medium-voltage converters • Traction drives Product validation • Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 Description Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document Revision 1.
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