G20N60HS Datasheet - Infineon

G20N60HS High Speed IGBT

IRFP3006PbF 60V 2.1m 2.5m 270A 195A G VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) D D G S S TO-247AC Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capabilit.

G20N60HS Features

* 2 1.0E-01 tav (sec) Fig 14. Typical Avalanche Current vs. Pulsewidth 400 EAR , Avalanche Energy (mJ) 300 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 170A 200 100 0 25 50 75 100 125 150 175 Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1

G20N60HS-Infineon.pdf