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Infineon Technologies Electronic Components Datasheet

H15R1202 Datasheet

Reverse Conducting IGBT

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IHW15N120R2
Soft Switching Series
Reverse Conducting IGBT with monolithic body diode
Features:
Powerful monolithic Body Diode with very low forward voltage
Body diode clamps negative voltages
Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
Low EMI
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
www.DataSheet4U.coCmomplete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
Applications:
Inductive Cooking
Soft Switching Applications
Type
VCE
IC VCE(sat),Tj=25°C Tj,max
Marking
IHW15N120R2 1200V 20A
1.5V
175°C H15R1202
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area (VCE 1200V, Tj 175°C)
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Diode surge non repetitive current, tp limited by Tjmax
TC = 25°C, tp = 10ms, sine halfwave
TC = 25°C, tp 2.5µs, sine halfwave
TC = 100°C, tp 2.5µs, sine halfwave
Gate-emitter voltage
Transient Gate-emitter voltage (tp < 5 ms)
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Mounting Torque
VCE
IC
ICpuls
-
IF
IFpuls
IFSM
VGE
Ptot
Tj
Tstg
-
Ms
C
G
E
PG-TO-247-3-21
Package
PG-TO-247-3-21
Value
1200
30
15
45
45
30
15
45
50
130
120
±20
±25
357
-40...+175
-55...+175
260
0.6
Unit
V
A
V
W
°C
Nm
1 J-STD-020 and JESD-022
Power Semiconductors
1
Rev. 1 Feb. 06


Infineon Technologies Electronic Components Datasheet

H15R1202 Datasheet

Reverse Conducting IGBT

No Preview Available !

IHW15N120R2
Soft Switching Series
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
www.DataSheetT4Uh.ecrommal resistance,
junction – ambient
Symbol
RthJC
RthJCD
RthJA
Conditions
Max. Value
0.52
0.47
40
Unit
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
V(BR)CES
VCE(sat)
VF
VGE(th)
ICES
VGE=0V, IC=500µA
VGE = 15V, IC=15A
Tj=25°C
Tj=125°C
Tj=175°C
VGE=0V, IF=15A
Tj=25°C
Tj=125°C
Tj=175°C
IC=0.4mA,
VCE=VGE
VCE=1200V,
VGE=0V
Tj=25°C
Tj=175°C
IGES
gfs
RGint
VCE=0V,VGE=20V
VCE=20V, IC=15A
min.
1200
-
-
-
-
-
-
5.1
-
-
-
-
Value
typ.
-
1.5
1.7
1.8
1.45
1.55
1.6
5.8
-
-
-
11.7
none
Unit
max.
-V
1.75
-
-
1.65
-
-
6.4
µA
5
2500
100
-
nA
S
Power Semiconductors
2
Rev. 1 Feb. 06


Part Number H15R1202
Description Reverse Conducting IGBT
Maker Infineon
Total Page 12 Pages
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