• Part: H20R1203
  • Description: Reverse conducting IGBT
  • Manufacturer: Infineon
  • Size: 1.92 MB
Download H20R1203 Datasheet PDF
Infineon
H20R1203
Features : - Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftmutationonly - TRENCHSTOPTMtechnologyapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -low VCEsat -easyparallelswitchingcapabilityduetopositive temperaturecoefficientin VCEsat - Low EMI - Qualifiedaccordingto JEDECfortargetapplications - Pb-freeleadplating;Ro HSpliant - pleteproductspectrumand PSpice Models: http://.infineon./igbt/ Applications: - Inductivecooking - Inverterizedmicrowaveovens - Resonantconverters - Softswitchingapplications Key Performanceand Package Parameters Type VCEsat,Tvj=25°C IHW20N120R3 1200V 20A 1.48V Tvjmax 175°C Marking H20R1203 Package PG-TO247-3 Datasheet .infineon. Pleasereadthe Important Noticeand Warningsattheendofthisdocument V2.7 2019-09-19 IHW20N120R3 Resonant Switching Series Tableof Contents Description - - . . . ....
H20R1203 reference image

Representative H20R1203 image (package may vary by manufacturer)