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Infineon Technologies Electronic Components Datasheet

IAUT300N10S5N015 Datasheet

Power Transistor

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IAUT300N10S5N015
OptiMOS™-5 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• Ultra low Rds(on)
• 100% Avalanche tested
Product Summary
VDS
RDS(on)
ID
100 V
1.5 m
300 A
P/G-HSOF-8-1
Tab
8
1
Tab
1
8
Type
Package
IAUT300N10S5N015 P/G-HSOF-8-1
Marking
5N10015
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
ID
T C=25°C, V GS=10V1)
T C=100 °C,
V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse2)
E AS
I D=150 A
Avalanche current, single pulse
I AS
-
Gate source voltage
V GS
-
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
Unit
300
A
247
1200
652
mJ
300
A
±20
V
375
W
-55 ... +175
°C
55/175/56
Rev. 1.0
page 1
2017-10-02


Infineon Technologies Electronic Components Datasheet

IAUT300N10S5N015 Datasheet

Power Transistor

No Preview Available !

IAUT300N10S5N015
Parameter
Symbol
Conditions
Thermal characteristics2)
Thermal resistance, junction - case R thJC -
min.
Values
typ.
Unit
max.
-
-
0.4 K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS
V GS=0 V,
I D=1 mA
100
-
-V
Gate threshold voltage
Zero gate voltage drain current
V GS(th) V DS=V GS, I D=275 µA
2.2
3.0
3.8
I DSS
V DS=100 V, V GS=0 V,
T j=25 °C
-
0.1
1 µA
V DS=50 V, V GS=0 V,
T j=85 °C2)
-
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
Drain-source on-state resistance
RDS(on) V GS=6 V, I D=75 A
-
V GS=10 V, I D=100 A
-
1
20
-
100 nA
1.6
2.0 m
1.3
1.5
Rev. 1.0
page 2
2017-10-02


Part Number IAUT300N10S5N015
Description Power Transistor
Maker Infineon
Total Page 3 Pages
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