* Best in class forward voltage (1.25 V)
* Best in class figure of merit (Qc x VF)
* High dv/dt ruggedness (150 V/ns) Benefits
* System efficiency improvement
* System cost and size savings due to the reduced cooling requirements
* Enabling higher frequency and increased powe
IDDD16G65C6 Datasheet (673.09 KB)
IDDD16G65C6
673.09 KB
650v sic schottky diode.
IDDD16G65C6 6th Generation CoolSiC™ 650V SiC Schottky Diode The CoolSiC™ generation G is the leading edge technology from Infineon for the SiC Schot.
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