IDH05G120C5 - Silicon Carbide Schottky Diode

Product Overview

Infineon

Datasheet Details

Part number	IDH05G120C5
Manufacturer	Infineon
File Size	882.99 KB
Description	Silicon Carbide Schottky Diode
Datasheet	IDH05G120C5-Infineon.pdf
Additional preview pages of the IDH05G120C5 datasheet.

Product details

Description

2 Table of Contents3 Maximum Ratings 4 Thermal Resistances 4 Electrical Characteristics5 Electrical Characteristics Diagram 6 Package Drawings 9 Revision History 10 Disclaimer 11 Final Data Sheet 3 Rev.2.1, 2017-07-21 IDH05G120C5 5th Generation CoolSiC™ 1200 V SiC Schottky Diode Maximum ratings Parameter Repetitive peak reverse voltage Continues forward current for Rth(j-c,max) TC = 161°C, D=1 TC = 135°C, D=1 TC = 25°C, D=1 Surge non-repetitive forward current, sine halfwave TC=25°C, tp=10

Features

Revolutionary semiconductor material - Silicon Carbide.
No reverse recovery current / No forward recovery.
Temperature independent switching behavior.
Low forward voltage even at high operating temperature.
Tight forward voltage distribution.
Excellent thermal performance.
Extended surge current capability.
Specified dv/dt ruggedness.
Qualified according to JEDEC1) for target.

📁 Similar Datasheet

IDH05S120 - Schottky Diode (Infineon Technologies)
IDH05S60C - Schottky Diode (Infineon Technologies)
IDH05SG60C - Schottky Diode (Infineon Technologies)
IDH02SG120 - Schottky Diode (Infineon Technologies)
IDH03SG60C - Schottky Diode (Infineon Technologies)
IDH04S60C - Schottky Diode (Infineon Technologies)
IDH04SG60C - Schottky Diode (Infineon Technologies)
IDH06S60C - Schottky Diode (Infineon Technologies)

Other Datasheets by Infineon

IDH05G65C5 - Silicon Carbide Diode
IDH02G120C5 - Diode
IDH02G65C5 - 650V SiC Schottky Diode
IDH03G65C5 - Silicon Carbide Diode
IDH04G65C5 - Silicon Carbide Diode
IDH04G65C6 - SiC Schottky Diode

Published: Jan 28, 2016 |