IDK10G120C5 Datasheet - Infineon

Schottky Diode

IDK10G120C5 Features

* Revolutionary semiconductor material - Silicon Carbide

* No reverse recovery current / no forward recovery

* Temperature independent switching behaviour

* Low forward voltage even at high operating temperature

* Tight forward voltage distribution

* Excellent thermal per

IDK10G120C5 General Description

* System efficiency improvement over Si diodes * Enabling higher frequency / increased power density solutions * System size/cost savings due to reduced heatsink requirements and smaller magnetics * Reduced EMI * Highest efficiency across the entire load range * Robust diode .

IDK10G120C5 Datasheet (1.01 MB)