IDK10G120C5 - Schottky Diode

Product Overview

Infineon

Datasheet Details

Part number	IDK10G120C5
Manufacturer	Infineon
File Size	1.01 MB
Description	Schottky Diode
Datasheet	IDK10G120C5 Datasheet
Additional preview pages of the IDK10G120C5 datasheet.

Product details

Description

System efficiency improvement over Si diodes Enabling higher frequency / increased power density solutions System size/cost savings due to reduced heatsink requirements and smaller magnetics Reduced EMI Highest efficiency across the entire load range Robust diode operation during surge events High reliability Related Links: www.infineon.com/SiC CASE Key performance parameters Type IDK10G120C5 VDC 1200 V IF 10 A QC 41nC Tvj,max 175°C Marking

Features

Revolutionary semiconductor material - Silicon Carbide.
No reverse recovery current / no forward recovery.
Temperature independent switching behaviour.
Low forward voltage even at high operating temperature.
Tight forward voltage distribution.
Excellent thermal performance 1 2.
Extended surge current capability.
Specified dv/dt ruggedness.
Pb-free lead plating; RoHS compliant Potential.

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Published: May 26, 2020 |