* 650 V Emitter Controlled technology
* Temperature stable behaviour of key parameters
* Low forward voltage (VF)
* Ultra fast recovery
* Low reverse recovery charge (Qrr)
* Low reverse recovery current (Irrm)
* 175 °C junction operating tempe
IDP30E65D1 Datasheet (1.66 MB)
IDP30E65D1
1.66 MB
Diode.
Diode Rapid Switching Emitter Controlled Diode IDP30E65D1 Emitter Controlled Diode Rapid 1 Series Data sheet Industrial Power Control IDP30E65D1 Emit.
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