* Qualified according to JEDEC for target applications
* 650 V Emitter Controlled technology
* Fast recovery
* Soft switching
* Low reverse recovery charge
* Low forward voltage and stable over temperature
* 175 °C junction operating temperatu
IDW40E65D2 Datasheet (1.55 MB)
IDW40E65D2
1.55 MB
Diode.
Diode Rapid Switching Emitter Controlled Diode IDW40E65D2 Emitter Controlled Diode Data sheet Industrial Power Control Emitter Controlled Diode Rapid.
📁 Related Datasheet
IDW40E65D1 Diode (Infineon Technologies)
IDW40G120C5B Silicon Carbide Schottky Diode (Infineon)
IDW40G65C5 SiC Schottky Barrier diodes (Infineon Technologies)
IDW40G65C5B Silicon Carbide Diode (Infineon)
IDW100E60 Fast Switching Emitter Controlled Diode (Infineon Technologies)
IDW10G120C5B Silicon Carbide Schottky Diode (Infineon)
IDW10G65C5 SiC Schottky Barrier diodes (Infineon Technologies)
IDW12G65C5 SiC Schottky Barrier diodes (Infineon Technologies)
IDW15E65D2 Diode (Infineon)
IDW15G120C5B 1200 V SiC Schottky Diode (Infineon)
