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IDW40G120C5B - Silicon Carbide Schottky Diode

General Description

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2 Table of Contents3 Maximum ratings4 Thermal Resistances 4 Electrical Characteristics5 Electrical Characteristics diagram 6 Package Drawings 9 Revision History 10 Disclaimer….

Rev.

Key Features

  • Revolutionary semiconductor material - Silicon Carbide.
  • No reverse recovery current / No forward recovery.
  • Temperature independent switching behavior.
  • Low forward voltage even at high operating temperature.
  • Tight forward voltage distribution.
  • Excellent thermal performance.
  • Extended surge current capability.
  • Specified dv/dt ruggedness.
  • Qualified according to JEDEC1) for target.

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Full PDF Text Transcription for IDW40G120C5B (Reference)

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Silicon Carbide Schottky Diode IDW40G120C5B 5th Generation CoolSiCâ„¢ 1200 V SiC Schottky Diode Final Datasheet Rev. 2....

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Datasheet Rev. 2.