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IDWD10G120C5 Datasheet 1200v Schottky Diode

Manufacturer: Infineon

Overview: IDWD10G120C5 IGC13R65U8W2 IGC13R65U8W2 IGC13R65U8W2 IGC513thR6G5eUn8Wer2ation CoolSiCTM 1200V Schottky.

General Description

 System efficiency improvement over Si diodes  Enabling higher frequency / increased power density solutions  System size/cost savings due to reduced heatsink requirements and smaller magnetics  Reduced EMI  Highest efficiency across the entire load range  Robust diode operation during surge events  High reliability  Related Links: www.infineon.com/SiC CASE Key performance parameters Type IDWD10G120C5 VDC IF 1200 V 10 A QC 57nC Tvj,max 175°C Marking D1012C5 Package PG-TO247-2 Datasheet Please read the Important Notice and Warnings at the end of this document www.infineon.com page 1 of 12 V 2.1 2021-03-01 5th Generation CoolSiCTM 1200V Schottky Diode SiC Diode Table of contents Table of contents

Key Features

  • No reverse recovery current / no forward recovery.
  • High surge current capability.
  • Temperature independent switching behaviour.
  • Low forward voltage even at high operating temperature.
  • Tight forward voltage distribution.
  • Specified dv/dt ruggedness.
  • Pb-free lead plating; RoHS compliant 1 2 Pin definition Potential.

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