IDWD30G120C5
Overview
System efficiency improvement over Si diodes Enabling higher frequency / increased power density solutions System size/cost savings due to reduced heatsink requirements and smaller magnetics Reduced EMI Highest efficiency across the entire load range Robust diode operation during surge events High reliability Related Links: CASE Key performance parameters Type IDWD30G120C5 VDC IF 1200 V 30 A QC 154nC Tvj,max 175°C.
- No reverse recovery current / no forward recovery
- High surge current capability
- Temperature independent switching behaviour
- Low forward voltage even at high operating temperature
- Tight forward voltage distribution
- Specified dv/dt ruggedness
- Pb-free lead plating; RoHS compliant 1 2 Pin definition Potential applications Pin 1 and backside: Cathode 1
- Industrial power supplies: Industrial UPS
- Infrastructure-Charge: Charger
- Metal treatment: Welding
