IGC05R60DE Datasheet | Infineon

Features : TRENCHSTOPTM Reverse Conducting (RC) technology for 600V applications offering: - Optimised VCEsat and VF for low conduction losses - Smooth switching performance leading to low EMI levels - Very tight parameter distribution - Operating range of 1 to 20k Hz - Maximum junction temperature 175°C - Short circuit capability of 5μs - Best in class current versus package size performance - Qualified according to JEDEC for target applications - plete product spectrum and PSpice Models: http://.infineon./igbt/ Applications: Motor drives Used for: Discrete ponents and molded modules Chip Type IGC05R60DE ICn 600V 6A Die Size 2.21 x 2.19 mm2 Package sawn on foil Mechanical Parameters Raster size Emitter pad size Gate pad size Area: total / active IGBT / active Diode Thickness Wafer size Max.possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size for original and sealed MBB bags Storage environment for open MBB bags 2.21 x 2.19 see chip drawing see chip drawing mm2 4.84 / 2.219 / 0.477 µm 200 mm Photoimide 3200 nm Al Si Cu Ni Ag - system Electrically conductive epoxy glue and soft solder (temperature budget: 290°C for 1min. or 260°C for 1.5min.) Al, <250µm  0.65mm ; max 1.2mm Ambient atmosphere air, Temperature 17°C - 25°C, < 6 month Acc. to IEC62258-3: Atmosphere >99% Nitrogen or inert gas, Humidity <25%RH, Temperature 17°C - 25°C, < 6 month Edited by INFINEON Technologies, IFAG IMM PSD D, L7384B, Edition 1.2,...