IGC07T120T6L - IGBT

Infineon

General Description

Attention please!

Key Features

1200V Trench + Field stop technology.
low switching losses.
positive temperature coefficient.
easy paralleling This chip is used for:.
low / medium power modules.

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IGC07T120T6L igbt by Infineon - Datasheet Preview

Datasheet Details

Part number	IGC07T120T6L
Manufacturer	Infineon
File Size	71.22 KB
Description	IGBT
Datasheet	IGC07T120T6L Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IGC07T120T6L IGBT4 Low Power Chip Features: • 1200V Trench + Field stop technology • low switching losses • positive temperature coefficient • easy paralleling This chip is used for: • low / medium power modules Applications: • low / medium power drives C G E Chip Type IGC07T120T6L VCE 1200V ICn 4A Die Size 2.54 x 2.72 mm2 Package sawn on foil MECHANICAL PARAMETER Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.pos sible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 2.54 x 2.72 1.029 x 1.248 0.358 x 0.514 mm 2 6.9 / 2.