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IGC090S20S1 - 200V Transistor

General Description

1 Maximum ratings 3 R

Key Features

  • Ultra fast switching and high efficiency.
  • Space saving and highly robust package.
  • No reverse recovery charge.
  • Ultra low gate charge and output charge.
  • Exposed die for top‑side thermal excellence.
  • Moisture rating MSL1.
  • Industrial grade 3x5 package Potential.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Public IGC090S20S1 Preliminary datasheet CoolGaNTM CoolGaNTM Transistor 200 V G3 Features • Ultra fast switching and high efficiency • Space saving and highly robust package • No reverse recovery charge • Ultra low gate charge and output charge • Exposed die for top‑side thermal excellence • Moisture rating MSL1 • Industrial grade 3x5 package Potential applications • Telecom & Datacenter • Class D Audio • Sync Rectification for AC‑DC and DC‑DC converters • e‑Mobility, UAVs • Battery powered tools • Solar & Energy storage systems Product validation Fully qualified according to JEDEC for Industrial Applications Table 1 Parameter VDS RDS(on) ID Qoss QG Qrr Key performance parameters Value Unit 200 V 6.7 mΩ 46 A 65 nC 8.