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IGC114T170S8RM IGBT

IGC114T170S8RM Description

IGC114T170S8RM IGBT3 Power Chip .
AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Vers.

IGC114T170S8RM Features

* 1700V Trench + Field stop technology
* low switching losses
* soft turn off
* positive temperature coefficient
* easy paralleling This chip is used for:

IGC114T170S8RM Applications

* drives Chip Type VCE IC Die Size IGC114T170S8RM 1700V 100A 9.47 x 12.08 mm2 C G E Package sawn on foil Mechanical Parameters Raster size Emitter pad size (incl. gate pad) Gate pad size Area total Thickness Wafer size Max. possible chips per wafer Passivation frontside Pad metal Backside

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