IGC13T120T6L
Features
:
- 1200V Trench + Field stop technology
- low switching losses
- positive temperature coefficient
- easy paralleling
This chip is used for:
- low / medium power modules
Applications:
- low / medium power drives
Chip Type IGC13T120T6L
VCE ICn 1200V 10A
Die Size 3.54 x 3.81 mm2
Package sawn on foil
MECHANICAL PARAMETER Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Pad metal
Backside metal
Die bond Wire bond Reject ink dot size
Remended storage environment
3.54 x 3.81
1.497 x 2.34 0.608 x 1.092 mm 2
13.48 / 6.93
115 µm
150 mm
90 grd
Photoimide
3200 nm Al Si Cu
Ni Ag
- system suitable for epoxy and soft solder die bonding
Electrically conductive glue or solder
Al, <500µm
∅ 0.65mm ; max 1.2mm
Store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C
Edited by IN FINEON Technologies , AIM PMD D CID CLS , L7623C, Edition...
