IGC142T120T6RM Datasheet | Infineon

Features : - 1200V Trench + Field stop technology - low switching losses - soft turnoff - positive temperature coefficient - easy paralleling This chip is used for: - medium power modules Applications: - medium power drives Chip Type VCE ICn Die Size IGC142T120T6RM 1200V 150A 11.31 x 12.56 m m2 Package sawn on foil MECHANICAL PARAMETER Raster size Emitter pad size (incl. gate pad) Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Remended storage environment 11.31 x 12.56 11.04 x 9.80 1.31 x 0.81 mm 2 142.1 / 113.1 120 µm 150 mm 90 grd Photoimide 3200 nm Al Si Cu Ni Ag - system suitable for epoxy and soft solder die bonding Electrically conductive glue or solder Al, <500µm ∅ 0.65mm ; max 1.2mm Store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C Edited by IN FINEON Technologies , AIM PMD D CID CLS , L7693B, Edition 1, 31.10.2007 MAXIMUM RATINGS Parameter Symbol Value Uni t Collector-Emitter voltage, Tj=25 °C DC collector current, limited by Tj...