IGC168T170S8RH
Features
:
- 1700V Trench + Field stop technology
- low switching losses and saturation losses
- soft turn off
- positive temperature coefficient
- easy paralleling
This chip is used for:
- power modules
Applications:
- drives
Chip Type
Die Size
IGC168T170S8RH 1700V 150A 13.38 x 12.58 mm2
Package sawn on foil
Mechanical Parameters Raster size Emitter pad size (incl. gate pad) Gate pad size Area total Thickness Wafer size Max.possible chips per wafer Passivation frontside Pad metal
Backside metal
13.38 x 12.58
11.159 x 10.353 1.674 x 0.899 mm2
190 µm
200 mm
Photoimide
3200 nm Al Si Cu
Ni Ag
- system suitable for epoxy and soft solder die bonding
Die bond
Electrically conductive glue or solder
Wire bond
Reject ink dot size for original and sealed MBB bags Storage environment for open MBB bags
Al, <500µm
0.65mm ; max 1.2mm
Ambient atmosphere air, Temperature 17°C
- 25°C, < 6 month
Acc. to IEC62258-3: Atmosphere >99% Nitrogen or inert gas,...
